AES Semigas


7 May 2024

Power Integrations to acquire vertical GaN power device firm Odyssey

Power Integrations Inc of San Jose, CA, USA (which provides high-voltage integrated circuits for energy-efficient power conversion), has agreed to acquire the assets of Odyssey Semiconductor Technologies Inc of Ithaca, NY, USA, which develops high-voltage vertical power switching components based on proprietary gallium nitride (GaN) processing technology. The transaction is expected to close in July, after which all key Odyssey employees are expected to join Power Integrations’ technology organization.

The acquisition supports Power Integrations’ ongoing development roadmap for its proprietary PowiGaN technology, which is featured in many of the firm’s product families including InnoSwitch ICs, HiperPFS-5 power-factor-correction ICs and the recently launched InnoMux-2 family of single-stage, multiple-output ICs. The company introduced 900V and 1250V versions of PowiGaN technology and products in 2023.

“Power Integrations has been at the forefront of GaN development and commercialization since we began shipping products with higher-power applications currently served by silicon carbide (SiC), at a much lower cost and higher performance enabled by the fundamental material advantages of GaN over SiC. The experience of the Odyssey team in high-current vertical GaN will augment and accelerate these efforts,” he adds.

“As the first company to commercialize high-voltage GaN, Power Integrations continues to lead the industry in driving the technology forward in terms of cost, voltage and current, as well as the design of system-level products that take full advantage of the capabilities of GaN,” comments Odyssey’s co-founder & CEO Dr Richard Brown.

See related items:

Vertical GaN power device firm Odyssey selling assets for $9.52m

Tags: Power electronics




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