News: Microelectronics
16 May 2024
ROHM showcasing EcoGaN and SiC power semiconductors at PCIM Europe
In booth 304 (hall 9) at Power, Control and Intelligent Motion (PCIM) Europe 2024 trade fair in Nuremberg, Germany (11–13 June), ROHM is presenting its new power semiconductor solutions, with a special focus on wide-bandgap devices.
The firm’s silicon carbide (SiC), silicon (Si) and gallium nitride (GaN) portfolio is designed to fulfill the needs of various sectors, focusing on e-mobility and power supply applications.
ROHM’s product highlights include the following:
Silicon carbide
ROHM is premiering new SiC power modules for automotive applications. In addition, ROHM is showcasing the conversion of its production to 8-inch SiC wafers and providing an additional outlook regarding its SiC product development.
ROHM’s 4th Generation SiC MOSFETs realize what is claimed to be industry-leading levels of low ON resistance, minimizing switching losses and supporting 15V and 18V gate–source voltage.
Gallium nitride
ROHM is exhibiting the EcoGaN family of 150V- and 650V-class GaN HEMTs in several evaluation kits. The BM3GxxMUV-LB series power stage IC — including built-in 650V GaN HEMTs and gate drivers — will be extended by higher integrated PFC and QR (quasi-resonant) flyback converters. These devices are said to provide an optimal solution for all electronics systems that require high power density and efficiency. ROHM is displaying more than 10 boards from its EcoGaN family, showcasing their contributions inside industrial solutions.
Also, during the PCIM Europe conference, ROHM’s power experts are participating in several panel discussions and conference presentations, as well as poster sessions.
Toshiba and ROHM collaborate on silicon and SiC power device and wafer manufacturing
