AES Semigas

IQE

21 May 2024

Transphorm showcases SuperGaN FET platform at PCIM

In stall 108 (Hall 7) at Power, Control and Intelligent Motion (PCIM) Europe 2024 in Nuremberg, Germany (11–13 June), Transphorm Inc of Goleta, near Santa Barbara, CA, USA — which designs and manufactures JEDEC- and AEC-Q101-qualified gallium nitride (GaN) field-effect transistors (FETs) for high-voltage power conversion — is showcasing what it claims is its ability to outperform competing wide-bandgap technologies in higher-power systems. For example, the normally-off d-mode SuperGaN platform delivers higher electron mobility, resulting in lower crossover losses versus silicon carbide — making it a more cost-effective, higher-performing solution for various electric vehicle, data-center/AI, infrastructure, renewable energy, and other broad industrial applications.

Transphorm’s SuperGaN FETs are in production in a wide range of customer products spanning the power spectrum from low 45W power adapters to higher-power 7.5kW PSUs. Many of these customer products are claimed to be the first publicly recognized GaN-based systems of their kind, demonstrating advantages enabled only by the SuperGaN platform. Examples include the liquid-cooled 7.5kW PSU for mission-critical data-center/blockchain applications; a 2.7kW server CRPS with >82W/in3 power density (the highest in any GaN power system available today); and 2.2kW and 3kW rack-mount 1U uninterruptible power supplies (UPSs). Transphorm says that these design wins illustrate its ability to drive GaN into the various application markets comprising an estimated GaN total addressable market (TAM) of $8bn by 2028.

In addition to real-world customer products, Transphorm has recently demonstrated a 5μs short-circuit withstand time, a bidirectional four-quadrant switch, and a 1200V GaN-on-sapphire device.

On-site demonstrations include Transphorm solutions for 2- and 3-wheeler electric vehicle chargers along with customer PSUs for renewable energy systems, data centers, and more.

Panel presentation

At PCIM, Transphorm’s Philip Zuk (senior VP, business development and marketing) is presenting in the panel ‘GaN Wide Bandgap Design, the Future of Power’ (hosted by Bodo’s Power Systems) at 2:20–3:20pm CEST on 12 June in stall 743 (Hall 7).

See related items:

Renesas to acquire GaN device maker Transphorm for $339m

Tags: Transphorm GaN-on-Si GaN HEMT

Visit: www.mesago.de/en/PCIM/

Visit: www.transphormusa.com

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