News: Microelectronics
14 November 2024
CGD and IFPEN demo GaN-based 800VDC inverter that outperforms SiC
Fabless firm Cambridge GaN Devices Ltd (CGD) — which was spun out of the University of Cambridge in 2016 to design, develop and commercialize power transistors and ICs that use GaN-on-silicon substrates — and IFP Energies nouvelles (IFPEN) — a French public research and training organization in the fields of energy, transport and the environment — have developed a demo that confirms the suitability of CGD’s ICeGaN650V GaN ICs in a multi-level, 800VDC inverter. The demo delivers high power density of 30kW/l, which is greater than can be achieved by more expensive, state-of-the-art silicon carbide (SiC)-based devices, it is claimed. The inverter also demonstrates the ease of paralleling that ICeGaN technology enables; each inverter node has three 25mΩ/650V ICeGaN ICs — 36 devices in total — in parallel.
“800VDC supports the 800V bus which is being increasingly adopted by the EV industry,” notes chief marketing officer Andrea Bricconi. “By addressing automotive and other high-voltage inverter applications with energy-efficient ICeGaN-based solutions, we are delivering on CGD’s key commitment — sustainability.”
The multi-level GaN inverters can power electric motors to over 100kW peak, 75kW continuous power. The CGD/IFPEN demo features: a high-voltage input of up to 800VDC; 3-phase output; a peak current of 125Arms (10s) (180Apk); and a continuous current of 85Arms continuous (120Apk).
CGD says that the ICeGaN multi-level design proposed by IFPEN reveals several benefits:
- Increased efficiency: the improvement in the efficiency of the traction inverter leads to an increase in battery range and a reduction in charging cycles. It also leads to a reduction in battery cost if the initial range (iso-range) is maintained;
- Higher switching frequencies: GaN transistors can operate at much higher frequencies than silicon transistors. This reduces iron losses in the motor, particularly in the case of machines with low inductances;
- Reduced electromagnetic interferences: the 3-level topology minimizes EMI and enhances the reliability of the system;
- Enhanced thermal management: insulated metallized substrate boards featuring an aluminium core facilitate superior thermal dissipation, ensuring optimal operating temperatures and extending the lifespan of the system and associated GaN devices;
- Modular design: this facilitates scalability and adaptability for varying system requirements.
“Following the implementation of this inverter reference using CGD’s enabling ICeGaN ICs coupled with innovative topologies, such as multi-level solutions, IFPEN now strongly believes that GaN is a breakthrough technology in terms of performance and cost for high-voltage traction inverters,” comments IFPEN program manager Gaetano De Paola.
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CGD and IFP Energies nouvelles sign automotive inverter development deal
