News: Microelectronics
25 November 2024
Diamfab and HiQuTe Diamond partner on synthetic diamond for power electronics
Diamfab of Grenoble, France (which synthesizes diamond wafers and designs diamond-based electronic components as well as developing the corresponding manufacturing processes) and plasma-assisted chemical vapor deposition (CVD) synthetic diamond startup HiQuTe Diamond have announced a strategic technical partnership spanning the key stages in the value chain, from substrate production to the manufacture of electronic components, via the epitaxy of doped layers. HiQuTe Diamond will contribute its expertise in producing high-quality diamond substrates, optimized to maximize the performance of power electronics devices. Diamfab will be responsible for the epitaxial growth of doped layers using advanced crystal growth processes, as well as the manufacture of high-performance components.
Both companies stem from CNRS laboratories: the Institut Néel for Diamfab and the LSPM (Laboratoire des Sciences des Procédés et des Matériaux) for HiQuTe Diamond.
Partnership to make diamond semiconductors an industrial reality
The partnership is reckoned to be the first in the world to combine diamond-related expertise in the three key stages – substrate, epitaxy and manufacturing – at such a high level of quality, in both academic and industrial spheres.
The two companies expect that, due to their geographical proximity and industrial agility, they will be able to accelerate iteration cycles to rapidly achieve unprecedented technical and financial performance, with the aim of making diamond semiconductors an industrial reality.
“With performance levels between 10 and 40 times higher than components based on conventional materials, diamond semiconductors are key to widespread adoption of electrification and the decarbonization of entire sectors of the economy,” claims Diamfab’s CEO Gauthier Chicot. “By working with HiQuTe Diamond, we have the will and the technological, human and geographical resources to create this sector of excellence in France,” he adds.
“The plasma-assisted CVD growth process makes it possible to produce boron-doped diamonds that are specifically adapted to the demanding applications of power electronics,” notes HiQuTe Diamond’s CEO Florent Alzetto. “This sustainable process ensures rigorous control of physical properties, while meeting performance challenges,” he adds. “The convergence of our expertise and that of Diamfab offers unprecedented opportunities to meet global industrial challenges in terms of performance and energy efficiency.”
Next steps
The two companies plan to begin collaborating by manufacturing a first series of vertical Schottky diodes on HiQuTe Diamond substrates using diamond epitaxy optimized by Diamfab, with the first prototypes expected in Spring 2025.
Diamfab raises €8.7m in first-round funding
