News: Microelectronics
6 November 2024
EPC Space launches rad-hard HEMTKY product line
EPC Space LLC of Haverhill, MA, USA (which provides high-reliability radiation-hardened enhancement-mode gallium nitride-on-silicon transistors and ICs for power management in space and other harsh environments) has launched the HEMTKY product line.
Comprising a high-electron-mobility transistor (HEMT) with an embedded Schottky diode, the presence of an anti-parallel Schottky diode in the HEMTKY structure minimizes third quadrant conduction losses absent GaN HEMT synchronous drive. Advantages include:
- predictable conduction losses, no reverse recovery charge;
- reduced system sensitivity to half-bridge dead-time variance;
- reduced negative voltage stress on gate drivers; and
- no need for an external anti-parallel diode.
First in the new series of products to be launched as part of the HEMTKY product line is the EPC7052BSH, a radiation-hardened e-GaN 100V, 30A, 10mΩ typical HEMT with monolithically integrated GaN Schottky diode in parallel with the source-drain terminals of the GaN power FET. The EPC7052BSH has a total dose rating greater than 1Mrad and SEE (single event effect) immunity for LET (linear energy transfer) of 85MeV/(mg/cm2).
“EPC Space’s HEMTKYs provide designers with ability to reduce their circuit power losses in hard-switching applications where the device is momentarily conducting high current in reverse,” says CEO Bel Lazar.
For 500-unit quantities, engineering models are priced at $212 each, while space-level units are priced at $315 each.
