News: Microelectronics
1 November 2024
Innoscience expands 100V automotive-grade GaN device portfolio
Gallium nitride-on-silicon (GaN-on-Si) power solutions firm Innoscience of Suzhou, China has expanded its portfolio with two 100V automotive-grade GaN devices.
The INN100W135A-Q (RDS(on),max = 13.5mΩ) and smaller-package INN100W800A-Q (RDS(on),max = 80mΩ) are both certified to AEC-Q101 and optimized for LiDAR as well as for high-power-density DC–DC converters, and Class D audio applications in the automotive sector.
The INN100W135A-Q and the ultra-compact INN100W800A-Q, with a WLCSP package measuring 2.13mm x 1.63mm and 0.9mm x 0.9mm respectively, are said to offer significant advantages in terms of size and power efficiency. Both devices are specifically tailored for the requirements of L2+/L3 assisted driving systems, with switching speeds up to 13 times faster and pulse widths reduced to one-fifth of those of silicon solutions. Parameters like Qg and Qoss are also improved by 1.5–3 times over their silicon counterparts. This results in medium- to long-range recognition capabilities of 200/300m, essential for advanced driver assistance and autonomous driving applications.
“Both devices have been designed to meet the growing demand for efficiency and precision in driving assistance and autonomous driving technologies — GaN devices are rapidly replacing traditional silicon in critical automotive applications due to their superior performance,” notes Dr Denis Marcon, general manager, Innoscience Europe. “In LiDAR applications, it is well understood that GaN enables higher resolution and greater detection distances while reducing power loss and temperature rise than is possible with traditional silicon technology.”
These automotive-grade GaN products have already entered mass production, with batch orders being fulfilled to meet demand.
