News: Microelectronics
12 November 2024
Mitsubishi Electric to ship samples of SiC MOSFET bare die for xEVs
On 14 November, Tokyo-based Mitsubishi Electric Corp is commencing shipment of samples of a silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) bare die for use in drive-motor inverters of electric vehicles (EVs), plug-in hybrid vehicles (PHEVs) and other electric vehicles (xEVs).
The chip is offered in two models: the WF0009Q-1200AA and the WF0008Q-0750AA, with rated voltages of 1200V and 750V, respectively, and on-resistances of 9.0mΩ and 7.8mΩ. The front-side electrode is compatible with solder bonding. The back-side electrode is compatible with solder bonding and Ag sintering bonding.
The firm reckons that its first standard-specification SiC MOSFET power semiconductor chip will enable it to respond to the diversification of inverters for xEVs and contribute to the growing popularity of these vehicles. The new SiC MOSFET bare die for xEVs combines a proprietary chip structure and manufacturing technologies to contribute to enhancing inverter performance, extending driving range and improving energy efficiency in xEVs.
Picture: (left) Wafer with SiC MOSFETs for xEVs (rendition), and (right) layout of SiC MOSFET bare die for xEVs (rendition of shipping sample).
Mitsubishi Electric’s new power semiconductor chip is a proprietary trench SiC MOSFET (where the gate electrode is embedded in a groove in the surface of the wafer) that reduces power loss by about 50% compared with conventional planar SiC MOSFETs (where the gate electrode is placed on the surface of the wafer), it is reckoned. Thanks to proprietary manufacturing technologies, such as a gate oxide film process that suppresses fluctuations in power loss and on-resistance, the new chip achieves long-term stability to contribute to inverter durability and xEV performance.
Proprietary trench SiC MOSFET extends driving range and lowers power costs for xEVs
- Advanced miniaturization technology, cultivated in Mitsubishi Electric’s manufacture of silicon power semiconductor chips, helps to reduce on-resistance compared with conventional planar SiC MOSFETs.
- Oblique ion implantation instead of conventional vertical ion implantation reduces switching loss.
- Power loss is reduced by about 50% compared with conventional planar SiC MOSFETs, resulting in improved inverter performance, extended driving range and reduced power costs for xEVs.
Proprietary manufacturing technologies contribute to xEV performance
- Unique SiC manufacturing technologies, cultivated by the company during more than 20 years of researching and manufacturing planar SiC MOSFETs and SiC Schottky barrier diodes (SBDs), are used to produce the trench SiC MOSFET. For example, Mitsubishi Electric’s proprietary gate oxide film process suppresses fluctuations in power loss and on-resistance caused by repeated on/off switching, resulting in more durable inverters to stabilize xEV performance over the long term.
Power semiconductors capable of efficiently converting electricity have attracted growing demand as key devices contributing to global decarbonization. Particularly in the automotive sector, vehicle electrification to reduce greenhouse-gas emissions is driving demand for diversified power semiconductors used in motor-drive inverters and other power-conversion equipment. Expectations are especially high for SiC power semiconductors due to their ability to significantly reduce power loss. Mitsubishi Electric, which was the first company to mass produce xEV power semiconductor modules in 1997, has introduced numerous power modules that contribute to improved reliability, including higher heat-cycle resistance and smaller inverters for various EVs and hybrid electric vehicles (HEVs). In March, the firm began shipping samples of its J3 Series power semiconductor for xEVs, which features a downsized design made possible by using the latest transfer-molded power module (T-PM), which is widely used in the automotive market.
Mitsubishi Electric says that, going forward, it will remain committed to providing high-quality SiC MOSFET bare dies with reduced power loss to help adoption of high-performance xEVs.
