News: Microelectronics
6 November 2024
Navitas presents first 8.5kW AI data-center power supply powered by GaN and SiC
Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA has announced what it claims is the world’s first 8.5kW power supply unit (PSU), powered by GaN and SiC technologies to achieve 98% efficiency, for next-generation AI and hyperscale data centers.
The AI-optimized 54V output PSU complies with Open Compute Project (OCP) and Open Rack v3 (ORv3) specifications and utilizes high-power GaNSafe and Gen-3 Fast SiC MOSFETs configured in 3-phase interleaved PFC and LLC topologies to ensure the highest efficiency and performance with the lowest component count. The PSU’s shift to a 3-phase topology for both the PFC and LLC (versus 2-phase topologies used by competing PSUs) enables what is claimed to be the industry’s lowest ripple current and EMI. Furthermore, the PSU reduces the number of GaN and SiC devices by 25% compared with the nearest competing system, which reduces the overall cost. The PSU has an input voltage range of 180–264Vac, a standby output voltage of 12V, and an operating temperature range of –5oC to 45oC. Its hold-up time at 8.5kW is 10ms, with 20ms possible through an extender.
The 3-phase LLC topology is enabled by high-power GaNSafe, which is specifically created for demanding, high-power applications, such as AI data centers and industrial markets. Navitas’ 4th-generation integrates control, drive, sensing and critical protection features that enable what is claimed to be unprecedented reliability and robustness. GaNSafe has short-circuit protection (350ns maximum latency), 2kV ESD protection on all pins, elimination of negative gate drive, and programmable slew rate control. All these features are controlled with 4-pins, allowing the package to be treated like a discrete GaN FET, requiring no VCC pin. Suitable for applications spanning 1–22kW, 650V GaNSafe in TOLL and TOLT packages are available with a range of RDS(ON)MAX of 25–98mΩ.
The 3-phase interleaved CCM TP-PFC is powered by Gen-3 Fast SiC MOSFETs with ‘trench-assisted planar’ technology, which offers what is claimed to be world-leading performance over temperature, delivering cool-running, fast switching and superior robustness to support faster-charging EVs and up to 3x more powerful AI data centers.
“This complete wide-bandgap solution of GaN and SiC enables the continuation of Navitas’ AI power roadmap which enables this 8.5kW and plans to drive to 12kW and higher in the near-term,” says CEO & co-founder Gene Sheridan. “As many as 95% of the world’s data centers cannot support the power demands of servers running NVIDIA’s latest Blackwell GPUs, highlighting a readiness gap in the ecosystem. This PSU design directly addresses these challenges for AI and hyperscale data centers.”
The PSU is on display for the first time in booth 129 (Hall C3) at Electronica 2024 at Trade Fair Center Messe München, Munich, Germany (12–15 November).
Navitas adds TOLT package to GaNSafe family
Navitas adds TOLL package to Gen-3 ‘Fast’ 650V SiC MOSFET range
