AES Semigas

IQE

12 November 2024

ROHM launches surface-mount SiC Schottky barrier diodes with 1.3x greater creepage distance for improved insulation resistance

ROHM Semiconductor has launched surface-mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by increasing the creepage distance between terminals. The initial lineup includes eight models (SCS2xxxNHR) for automotive applications such as on-board chargers (OBCs) and DC-DC converters (available now), with plans to deploy eight additional models (SCS2xxxN) for industrial equipment such as factory automation (FA) devices (e.g. AC servo motors for industrial robots) and photovoltaic (PV) inverters, power conditioners, uninterruptible power supplies (UPS) etc (scheduled to be available) in December.

The rapidly expanding xEV market is driving demand for power semiconductors including SiC SBDs, which provide low heat generation along with high-speed switching and high-voltage capabilities in applications such as on-board chargers. Additionally, manufacturers increasingly rely on compact surface-mount devices (SMDs) compatible with automated assembly equipment to boost manufacturing efficiency. Compact SMDs typically feature smaller creepage distances, which makes high-voltage tracking prevention a critical design challenge.

ROHM has been working to develop high-performance SiC SBDs that offer breakdown voltages suitable for high-voltage applications with ease of mounting. Adopting an optimized package shape, it has achieved a minimum creepage distance of 5.1mm, improving insulation performance compared with with standard products.

Specifically, the new products utilize an original design that removes the center pin previously located at the bottom of the package, extending the creepage distance to a minimum of 5.1mm, about 1.3 times greater than standard products. This minimizes the possibility of tracking (creepage discharge) between terminals, eliminating the need for insulation treatment through resin potting when surface mounting the device on circuit boards in high-voltage applications. Additionally, the devices can be mounted on the same land pattern as standard and conventional TO-263 package products, allowing easy replacement on existing circuit boards.

Two voltage ratings are offered – 650V and 1200V – supporting 400V systems commonly used in xEVs, as well as higher-voltage systems expected to gain wider adoption in the future. The automotive-grade SCS2xxxNHR are AEC-Q101 qualified, ensuring that they meet the high reliability standards that this application sector demands.

ROHM says that, going forward, it will continue to develop high-voltage SBDs using SiC, contributing to low-energy-consumption and high-efficiency requirements in automotive and industrial equipment by providing optimal power devices that meet market needs.

See related items:

ROHM and UAES sign long-term supply agreement for SiC power devices

Tags: Rohm SiC Schottky barrier diodes

Visit: www.rohm.com/products/sic-power-devices

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