News: Suppliers
25 October 2024
III-V Epi’s Neil Gerrard co-authors paper on epitaxially regrown quantum dot PCSELs
III–V Epi Ltd of Glasgow, Scotland, UK — which provides a molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) service for custom compound semiconductor wafer design, manufacturing, test and characterization — notes that its director of epitaxy Dr Neil Gerrard is among the expert contributors to the white paper ‘Epitaxially regrown quantum dot photonic crystal surface emitting lasers’ (Kyaw et al, Appl. Phys. Lett. (2024) 124, 221101).
III-V Epi was responsible for the epitaxial regrowth of the gallium arsenide (GaAs)-based devices, which were monolithically integrated on the same wafer. These lased at ~1230nm, with excited-state lasing at ~1140nm, aimed at datacoms applications. Threshold current densities were 0.69kA/cm2 and 1.05kA/cm2, respectively.
“PCSELs (photonic-crystal surface-emitting lasers) are a new class of semiconductor laser which has a 2D photonic crystal within its device structure,” says Gerrard. “They uniquely offer simultaneous high-power and single-mode vertical emission. They also offer features such as narrow divergence, beam steering, control of wavelength, and polarization, making PCSELs attractive in a diverse range of semiconductor laser applications,” he adds.
“Epitaxial regrowth is the preferred method for fabricating PCSELs, as many detrimental defects associated with producing other types of lasers can be eliminated and high power and high efficiency realised,” continues Gerrard. “Epitaxial regrowth also brings greater flexibility in PC [photonic crystal] design, allowing for the build of both void-semiconductor contrast PCSELs, which offer the best performance in terms of power and efficiency, and all-semiconductor PCSELs, with large associated coupling coefficients.”
III-V Epi’s CTO Richard Hogg to chair PCSEL Workshop at Aston University
