News: Microelectronics
28 October 2024
Navitas previews advances in GaN and SiC technologies, including first 8.5kW AI data-center power supply at electronica
Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA is previewing several breakthroughs in booth 129 (Hall C3) at electronica 2024 at Trade Fair Center Messe München, Munich, Germany (12-15 November).
The booth invites visitors to discover how next-generation GaN and SiC technology enable the latest solutions for AI data centers, electric vehicle (EV) transportation, renewable energy, industrial drives, and consumer appliances. Each example highlights end-user benefits such as higher power density, increased efficiency, longer range, faster charging, portability, and grid independence, along with a focus on how low-carbon-footprint GaN and SiC technology can save over 6Gtons/year CO2 by 2050.
Technology updates include what is claimed to be the first 8.5kW power supply for AI and hyperscale data centers, using high-power GaNSafe power ICs and Gen-3 Fast SiC MOSFETs.
GeneSiC technology is said to offer high performance over temperature to provide cool-running, fast-switching SiC MOSFETs to support up to 3x more powerful AI data centers and faster-charging EVs. The Gen-3 Fast GeneSiC MOSFETs are developed using a proprietary ‘trench-assisted planar’ technology, offering what is claimed to be leading performance while also providing superior robustness, manufacturability and cost than the competition. Gen-3 Fast MOSFETs deliver high efficiency with high-speed performance, enabling up to 25°C lower case temperature, and up to 3x longer life than SiC products from other vendors, it is claimed.
Also on display is the company’s latest development of GaNSense motor drive ICs for home appliances and an industrial, 650V bi-directional GaN demonstrator for next-generation, highest-efficiency and power density solutions, as well as newly released SiCPAK modules for high-power markets such as power grid, renewables, EV charging, and UPS.
In addition to the exhibition, the company’s Llew Vaughan-Edmunds is taking part in the EETimes panel debate ‘SiC & GaN Technologies - Exploring Advancements, Addressing Challenges’ (12 November, 2:20pm local time), which is examining both recent and upcoming advances that will increase wide-bandgap technologies’ share of the legacy silicon power IC market, which has been valued at $22bn/year. Market analyst firm Yole Group predicts that GaN and SiC products will comprise 30% of the power semiconductor market by 2027.
Navitas introduces IntelliWeave digital control technique for AI data centers
