News: Microelectronics
2 October 2024
Raytheon to develop ultra-wide-bandgap semiconductors for DARPA
US-based Raytheon (a business of aerospace & defense company RTX) has been awarded a three-year, two-phase contract from the United States Defense Advanced Research Projects Agency (DARPA) to develop foundational ultra-wide-bandgap semiconductors (UWBGS), based on diamond and aluminium nitride (AlN) technology, which allow increased power delivery and thermal management in sensors and other electronic applications.
During phase one, the Raytheon Advanced Technology team will develop diamond and aluminium nitride semiconductor films and their integration onto electronic devices. Phase two will focus on optimizing and maturing the diamond and aluminium nitride technology onto larger-diameter wafers for sensor applications.
“Raytheon has extensive proven experience developing similar materials such as gallium arsenide and gallium nitride for Department of Defense systems,” says Colin Whelan, president of Advanced Technology at Raytheon. “By combining that pioneering history and our expertise in advanced microelectronics, we’ll work to mature these materials towards future applications.”
The unique material properties of UWBGS offer several advantages over traditional semiconductor technologies, enabling highly compact, ultra-high-power radio frequency switches, limiters and power amplifiers. Their high thermal conductivity also allows the ability to operate at higher temperatures and in more extreme environments.
The team’s goal is to spearhead the development of these materials towards devices that are well suited for both existing and future radar and communication systems with extended capability and range, including cooperative sensing, electronic warfare, directed energy, and circuitry in high-speed weapon systems such as hypersonics.
Work on the contract is being conducted at Raytheon’s foundry in Andover, Massachusetts.
Element Six to lead US DARPA-funded Ultra-Wide BandGap Semiconductors program
