News: Suppliers
21 October 2024
Riber secures order for MBE 49 GaN system
Molecular beam epitaxy (MBE) system maker Riber S.A. of Bezons, France says that it has sold an MBE 49 GaN production system (for delivery in 2025) to a European customer that aims to enhance its capacity for producing gallium nitride (GaN) components for next-generation high-brightness and low-energy displays. The MBE 49 GaN system is specifically configured for plasma-assisted GaN epitaxy on 200mm silicon wafers, offering a cutting-edge solution for manufacturing aluminium gallium nitride (AlGaN) and indium gallium nitride (InGaN) devices.
Riber says that its MBE technology enables lower growth temperature for high-indium-content InGaN, precise control over nanowire formation, minimal residual doping, and enhanced p-type doping capabilities - crucial factors in optimizing technology performance.
The MBE 49 system is fully automated and powered by Crystal XE process control software. It integrates in-situ instrumentation tools that enable precise monitoring and control, ensuring high-quality epitaxial growth processes, says Riber. The technology is fully compatible with 200mm silicon wafers.
Riber receives order for MBE 49 GaN production system
Riber’s MBE 49 GaN aims to compete with MOCVD for 200mm GaN-on-Si
