News: Microelectronics
31 October 2024
Sanan Semiconductor adds 1700V and 2000V devices to silicon carbide portfolio
Wide-bandgap power semiconductor materials, component and foundry services provider Sanan Semiconductor Co Ltd of Changsha City, Hunan, China has expanded its silicon carbide (SiC) power product portfolio by launching 1700V and 2000V devices, offering high power efficiency in applications ranging from renewable energy to electric vehicle charging infrastructure.
Key highlights of the new product lineup include:
- 1700V SiC MOSFETs with 1000mΩ on-resistance;
- 1700V SiC diodes available in 25A and 50A variants;
- 2000V 40A SiC diodes, with a 20A version planned for release by the end of 2024;
- development of a 2000V 35mΩ SiC MOSFET (release date in 2025).
“By enabling higher DC voltages, these components allow for increased power output at the same current levels, or maintaining system power ratings while reducing current and energy losses dramatically,” says project manager Leo Liao.
The 1700V SiC MOSFETs and diodes are particularly well-suited for applications requiring extra voltage margins beyond traditional 1200V devices. Meanwhile, the 2000V SiC diodes can be utilized in high DC link voltage systems up to 1500V DC, addressing the needs of industrial and power transmission applications.
The new SiC devices are claimed to offer superior efficiency compared with traditional silicon-based alternatives across a wide range of applications, including:
- solar string inverters and power optimizers;
- electric vehicle fast-charging stations;
- energy storage systems; and
- high-voltage power grids and energy transmission networks.
“As the world transitions to cleaner energy sources and more efficient power systems, the demand for high-performance power semiconductors continues to grow,” notes Z.R. Zhang, VP of sales & marketing. “Our expanded SiC portfolio demonstrates our commitment to driving innovation in this critical sector.” The new 1700V and 2000V SiC devices are available now for sampling.
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