News: Suppliers
18 September 2024
ASMPT introduces ALSI LASER1205
Singapore’s ASMPT Limited has introduced the ALSI LASER1205, a multi-beam laser dicing platform, which the firm says cuts precisely, gently and efficiently thanks to its V-shaped patterned Diffractive Optical Element (V-DOE) that was developed and patented by ASMPT. The V-DOE uses multi-beam laser processes to separate semiconductor chips on a wafer. A DOE element splits the laser beam into multiple sub-beams that simultaneously work on different areas of the wafer, making it possible to efficiently cut through the layers of material, and thereby speed up the process. In addition, says the firm, the multi-beam technology minimizes the Heat Affected Zone (HAZ), which improves the quality of the diced chips and raises their die strength to between 450 and 500 Mpa.
“With its superior electrical and thermal properties, silicon carbide (SiC) is an indispensable material for the energy transition. It can be used to produce innovative and compact power electronics for things like high-efficiency inverters,” says David Felicetti, business development and product marketing manager at ASMPT. “Unfortunately, SiC wafers are very thin and sensitive, which has often led to low throughput and high scrap rates during dicing and grooving.”
The ALSI Laser1205 can process wafers with thicknesses ranging from 10 to 250 microns with a positioning accuracy of less than 1.5 microns. The system’s cutting width is less than 12 microns on 100 microns of silicon with the multi-beam process, all while being 50 percent faster than traditional methods.
