News: Microelectronics
25 September 2024
ST unveils fourth-generation silicon carbide power technology for next-gen EV traction inverters
STMicroelectronics of Geneva, Switzerland is introducing its fourth-generation STPOWER silicon carbide (SiC) MOSFET technology, which is claimed to bring new benchmarks in power efficiency, power density and robustness. While serving the needs of both the automotive and industrial markets, the new Generation 4 technology is particularly optimized for traction inverters, the key component of electric vehicle (EV) powertrains. The firm plans to introduce further SiC technology innovations through 2027.
“We continue to advance SiC MOSFET technology with innovations in the device, advanced packages, and power modules,” says Marco Cassis, president, Analog, Power & Discrete, MEMS and Sensors Group. “Together with our vertically integrated manufacturing strategy, we are delivering industry-leading SiC technology performance and a resilient supply chain to meet the growing needs of our customers.”
This latest generation of SiC devices is conceived to benefit future EV traction inverter platforms, with further advances in size (with die 12–15% smaller than that for Generation 3 devices, on average) and energy-saving potential. While the EV market continues to grow, challenges remain to achieve widespread adoption, and car makers are looking to deliver more affordable electric cars. 800V EV bus drive systems based on SiC have enabled faster charging and reduced EV weight, allowing car makers to produce vehicles with longer driving ranges for premium models.
ST says that its new SiC MOSFET devices, which will be made available in 750V and 1200V classes, will improve energy efficiency and performance of both 400V and 800V EV bus traction inverters, bringing the advantages of SiC to mid-size and compact EVs — key segments to help achieve mass-market adoption. The new-generation SiC technology is also suitable for high-power industrial applications including solar inverters, energy storage solutions and data centers, significantly improving energy efficiency for these growing applications.
ST has completed qualification of the 750V class of the fourth-generation SiC technology platform and expects to complete qualification of the 1200V class in first-quarter 2025. Commercial availability of devices with nominal voltage ratings of 750V and 1200V will follow, allowing designers to address applications operating from standard AC-line voltages up to high-voltage EV batteries and chargers.
Use cases
ST says that its Generation 4 SiC MOSFETs provide higher efficiency, smaller components, reduced weight, and extended driving range compared with silicon-based solutions. These benefits are critical for achieving widespread adoption of EVs, and leading EV manufacturers are engaged with ST to introduce the Generation 4 SiC technology into their vehicles, enhancing performance and energy efficiency, the firm adds.
While the primary application is EV traction inverters, the Generation 4 SiC MOSFETs are also suitable for use in high-power industrial motor drives, benefiting from the devices’ improved switching performance and robustness. This results in more efficient and reliable motor control, reducing energy consumption and operational costs in industrial settings.
In renewable energy applications, the Generation 4 SiC MOSFETs enhance the efficiency of solar inverters and energy storage systems, contributing to more sustainable and cost-effective energy solutions.
Additionally, the SiC MOSFETs can be utilised in power supply units for server data centers for AI, where their high efficiency and compact size are crucial for the significant power demands and thermal management challenges.
Roadmap
To accelerate the development of SiC power devices through its vertically integrated manufacturing strategy, ST is developing multiple SiC technology innovations in parallel to advance power device technologies over the next three years. The fifth generation of ST SiC power devices will feature a high-power-density technology based on a planar structure. At the same time, ST is developing an innovation that promises outstanding on-resistance RDS(on) value at high temperatures and further RDS(on) reduction, compared with existing SiC technologies.
At the International Conference on Silicon Carbide and Related Materials (ICSCRM 2024) in Raleigh, NC, USA (29 September–4 October), ST is giving technical presentations and an industrial keynote on ‘High volume industrial environment for leading edge technologies in SiC’.
ST to build fully integrated 200mm silicon carbide power device and module plant in Catania
ST launches third generation of STPOWER SiC MOSFETs
