News: Microelectronics
25 September 2024
Toshiba’s launches 1200V third-generation SiC Schottky barrier diodes
Japan-based Toshiba Electronic Devices & Storage Corp (TDSC) – which was spun off from Toshiba Corp in 2017 – has added the TRSxxx120Hx Series of 1200V products to its lineup of third-generation silicon carbide (SiC) Schottky barrier diodes (SBD) for industrial equipment, such as photovoltaic inverters, EV charging stations, and switching power supplies for industrial equipment. Toshiba has started shipments of the ten new products in the series: five in a TO-247-2L package and five in a TO-247 package.
Picture: Toshiba’s 1200V third-generation SiC Schottky barrier diodes.
By implementing an enhanced junction barrier Schottky (JBS) structure, the TRSxxx120Hx series allows what is claimed to be an industry-leading low forward voltage (VF) of just 1.27V (typical). The merged PiN-Schottky incorporated into a JBS structure reduces diode losses under high-current conditions. The TRS40N120H of the new series accepts a forward DC current (IF(DC)) of 40A (maximum) and a non-repetitive peak forward surge current (IFSM) of 270A (maximum), with the maximum case temperature (TC) of all devices being +175°C.
Combined with the lower capacitive charge and leakage current, the products help to improve system efficiency and simplify thermal design. For example, at a reverse voltage (VR) of 1200V, the TRS20H120H diode housed in the TO-247-2L package provides a low total capacitive charge (QC) of 109nC and low reverse current (IR) of 2µA.
Toshiba will continue to expand its SiC power device lineup, and to focus on improving efficiency that reduces power loss in industrial power equipment.
Toshiba releases third-generation SiC MOSFETs with reduced switching losses
