News: Microelectronics
16 April 2025
Diodes Inc adds 650V SiC Schottky diodes with low figure-of-merit
Power semiconductor product supplier Diodes Inc of Plano, TX, USA has expanded its silicon carbide (SiC) product portfolio with a series of five high-performance, low figure-of-merit (FOM) 650V SiC Schottky diodes. Rated at 4A, 6A, 8A, 10A and 12A, the DSCxxA065LP series is housed in the ultra-thermally efficient T-DFN8080-4 package and is designed for high-efficiency power switching applications, such as DC-to-DC and AC-to-DC conversion, renewable energy, data centers (especially those that process heavy artificial intelligence (AI) workloads), and industrial motor drives.
The industry-leading FOM, calculated as FOM=QC×VF, is attributed to:
- negligible switching losses, due to the absence of reverse recovery current and low capacitive charge (QC); and
- low forward voltage (VF), minimizing conduction losses, enhancing overall power efficiency.
These characteristics make them suitable for high-speed switching circuits, says the firm.
The high-performance SiC diodes are also notable for their lowest reverse leakage current (IR) in the industry, at 20µA (maximum). This minimizes heat dissipation and conduction losses, improving system stability and reliability, particularly in comparison to silicon Schottky devices. This reduction in heat dissipation also lowers cooling costs and operating expenses.
The compact and low-profile T-DFN8080-4 (typical 8mm x 8mm x 1mm) surface-mount package incorporates a large underside heat pad, which reduces thermal resistance. Requiring less board space and providing a larger heat pad, the T‑DFN8080-4 is a suitable alternative to the TO252 (DPAK). This benefits circuit designs by increasing power density, reducing overall solution size, and lowering the cooling budget.
The 4A DSC04A065LP, 6A DSC06A065LP, 8A DSC08A065LP, 10A DSC10A065LP and 12A DSC12A065LP are available at $1.25, $1.55, $1.80, $2.10 and $2.40, respectively, each in 2500-unit quantities.
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