News: Microelectronics
17 April 2025
Navitas’ new 1200V SiCPAK power modules enable high reliability and efficient high-temperature performance
Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA has released its latest SiCPAK power modules with epoxy-resin potting technology, powered by proprietary trench-assisted planar SiC MOSFET technology, that have been rigorously designed and validated for the most demanding high-power environments, prioritizing reliability and high-temperature performance. Target markets include electric vehicle (EV) DC fast chargers (DCFC), industrial motor drives, interruptible power supplies (UPS), solar inverters and power optimizers, energy storage systems (ESS), industrial welding, and induction heating.
Enabled by advanced epoxy-resin potting technology, the new portfolio of 1200V SiCPAK power modules are engineered to withstand high-humidity environments by preventing moisture ingress and enable stable thermal performance by reducing degradation from power and temperature variations.
The SiCPAK modules demonstrated a 5x increase in lower thermal resistance following 1000 cycles of thermal shock testing (-40°C to +125°C) compared with conventional silicone-gel-filled case-type modules. Furthermore, all silicone-gel-filled modules failed isolation tests while SiCPAK epoxy-resin potted modules maintained acceptable isolation levels.
Enabled by over 20 years of SiC innovation, Navitas’ GeneSiC trench-assisted planar SiC MOSFET technology provides what is claimed to be industry-leading performance over temperature, enabling up to 20% lower losses, cooler operation, and superior robustness to support long-term system reliability.
The trench-assisted planar technology enables an extremely low increase in on-resistance RDS(ON) versus temperature, which results in the lowest power losses across a wider operating range and offers up to 20% lower RDS(ON) under in-circuit operation at high temperatures compared with competition, it is claimed. Additionally, all GeneSiC SiC MOSFETs have the highest-published 100%-tested avalanche capability, up to 30% better short-circuit withstand energy, and tight threshold voltage distributions for easy paralleling, the firm adds.
The 1200V SiCPAK power modules have built-in NTC thermistors and are available now for mass production, rated from 4.6mΩ to 18.5mΩ in half-bridge, full-bridge and 3L-T-NPC circuit configurations. They are pin-to-pin compatible with industry-standard press-fit modules. Additionally, optional pre-applied thermal interface material (TIM) for simplified assembly is available.
Navitas enters high-power markets with GeneSiC SiCPAK modules and bare die
