News: Microelectronics
16 April 2025
Toshiba showcasing wide-bandgap technology at PCIM
In booth 229 (Hall 4A) at the Power Conversion Intelligent Motion (PCIM 2025) Expo & Conference in Nuremberg, Germany (6–8 May), Toshiba Electronics Europe GmbH of Düsseldorf, Germany is showcasing semiconductor solutions for key applications, including e-mobility, industrial, energy, and infrastructure.
“Innovative technologies and solutions, highest quality levels, and low-carbon-footprint products support engineers in enhancing performance, reliability and sustainability to build an all-electric society,” notes Armin Derpmanns, VP marketing & operations, Toshiba.
At Toshiba’s booth, three demonstration areas are set to focus on the latest innovation in wide-bandgap (WBG) technology, advances for the next generation of silicon MOSFETs, and motor control-related applications.
Toshiba is giving updates on its recent advances in 6-inch-diameter silicon carbide (SiC), as well as 8- and 12-inch silicon wafer production. Additionally, examples of new IGBT/FRD, RC-IGBT and SiC MOSFET dies are being introduced. In terms of modules, samples of a 2-in-1 SiC module with pin fin cooler are being displayed. Visitors to the booth can examine a mock-up of the new 1200V/350A mid-voltage multi-chip package (MV-MCP) with double-sided heat dissipation, designed for xEV traction inverter applications.
The energy (WBG) sector of Toshiba’s booth spotlights high-power intelligent flexible package low-voltage (iXPLV) and E3D SiC MOSFET modules.
For xEV inverter designers, Toshiba is presentationg ‘Impact of SBD embedding into SiC MOSFETs on dynamic behaviour at High Temperature’ at the Bruessel 1 stage on 6 May (11:20–11:40). Shunsuke Asaba will share research findings indicating that recovery loss remains constant across temperatures and consistent turn-on loss is therefore anticipated in inverter circuits, regardless of temperature.
Regarding the latest Toshiba power electronics and semiconductor device modelling developments, Kazuyasu Takimoto is presenting a poster ‘Accurate IGBT Circuit Model Considering Impact of Dynamic Avalanche Phenomenon’ in the foyer during the Modelling and Simulations II session on 8 May (11:15–12:45).
Toshiba ships early test samples of bare die 1200V SiC MOSFET
