News: Microelectronics
13 February 2025
Infineon releases first silicon carbide products to customers based on 200mm silicon carbide wafers
Infineon Technologies AG of Munich, Germany says that it has made significant progress on its 200mm silicon carbide (SiC) roadmap, and is releasing the first products based on the 200mm SiC technology to customers in first-quarter 2025. Manufactured in Villach, Austria, the products provide SiC power technology for high-voltage applications, including renewable energies, trains, and electric vehicles.
Additionally, the transition of Infineon’s manufacturing site in Kulim, Malaysia, from 150mm wafers to the larger and more efficient 200mm-diameter wafers is fully on track. The newly built Module 3 is poised to commence high-volume production aligned with market demand.
“The implementation of our SiC production is progressing as planned, and we are proud of the first product releases to customers,” says chief operations officer Dr Rutger Wijburg. “By ramping up SiC production in Villach and Kulim in phases, we are improving cost-efficiency and continuing to ensure product quality. At the same time, we are making sure our manufacturing capacities can meet the demand for SiC-based power semiconductors.”
Picture: A technical engineer holding a 200mm silicon carbide wafer in the cleanroom of Infineon’s fab in Villach, Austria.
Infineon says that its SiC products let customers develop energy-efficient solutions for electric vehicles, fast-charging stations and trains as well as renewable energy systems and AI data centers. The firm says that the release to customers of the first SiC products based on the 200mm wafer technology marks a substantial step forward in its SiC roadmap, with a strong focus on providing a comprehensive portfolio of high-performance power semiconductors that promote green energy and contribute to CO2 reduction.
As ‘Infineon One Virtual Fab’ for wide-bandgap (WBG) technologies, Infineon’s production sites in Villach and Kulim share technologies and processes that are said to allow for fast ramping and efficient operation in SiC and gallium nitride (GaN) manufacturing.
Infineon opens first phase of largest SiC power semiconductor fab in Malaysia
