News: Microelectronics
20 February 2025
SemiQ launches 1200V SiC full-bridge modules to simplify development of solar inverters, energy storage and battery charging applications
SemiQ Inc of Lake Forest, CA, USA — which designs, develops and manufactures silicon carbide (SiC) power semiconductors and 150mm SiC epitaxial wafers for high-voltage applications — has announced a family of three 1200V SiC full-bridge modules, each integrating two of the company’s rugged high-speed switching SiC MOSFETs with reliable body diode.
The modules have been developed to simplify the development of photovoltaic inverters, energy storage, battery charging and other high-frequency DC applications.
Available in 18mΩ, 38mΩ and 77mΩ (RDSon) variants, the modules have been tested at voltages exceeding 1350V and deliver a continuous drain current of up to 102A, a pulsed drain current of up to 250A and a power dissipation of up to 333W.
Operational with a junction temperature of up to 175oC, the rugged B2 modules have exceptionally low switching losses (EON 0.13mJ, EOFF 0.04mJ at 25oC – 77mΩ module), low zero-gate voltage drain/gate source leakage (0.1µA/1nA – all modules) and low junction-to-case thermal resistance (0.4oC per watt – 18mΩ module).
“By integrating high-speed SiC MOSFETs with exceptional performance and reliability, our new QSiC 1200V family of full-bridge modules sets a new standard for power density and efficiency in demanding DC applications,” says Seok Joo Jang, director of module engineering. “This family of modules simplifies system design, and enables faster time-to-market for next-generation solar, storage and charging solutions.”
Available immediately, the modules can be mounted directly to a heat-sink, are housed in a 62.8mm x 33.8mm x15.0mm package (including mounting plates) with press-fit terminal connections and split DC negative terminals.
SemiQ adds S7 package option to QSiC 1200V power module family
