AES Semigas

IQE

3 February 2025

Vishay launches 650V and 1200V silicon carbide Schottky diodes in SOT-227 package

Discrete semiconductor and passive electronic component maker Vishay Intertechnology Inc of Malvern, PA, USA has introduced 16 new 650V and 1200V silicon carbide (SiC) Schottky diodes in the industry-standard SOT-227 package.

Designed to deliver high speed and efficiency for high-frequency applications, the Vishay Semiconductors devices are claimed to offer the best trade-off between capacitive charge (QC) and forward voltage drop for diodes in their class.

The new devices consist of 40–240A dual-diode components in a parallel configuration, and 50A and 90A single-phase bridge devices. Built on thin wafer technology, the diodes’ low forward voltage drop down to 1.36V dramatically reduces conduction losses for increased efficiency. Further increasing efficiency, the devices are said to offer better reverse recovery parameters than silicon-based diodes and have virtually no recovery tail.

Typical applications include AC/DC PFC and DC/DC ultra-high-frequency output rectification in FBPS and LLC converters for photovoltaic systems, charging stations, industrial UPS, and telecom power supplies. In these applications, the diodes’ low QC down to 56nC allows for high-speed switching, while their industry-standard package offers a drop-in replacement for competing solutions.

The diodes deliver high-temperature operation to +175°C and a positive temperature coefficient for easy parallelling. UL-approved to file E78996, the devices feature a large creepage distance between terminals and a simplified mechanical design for rapid assembly.

Samples and production quantities of the new SiC diodes are available now, with lead times of 18 weeks.

See related items:

Vishay introduces 16 new Gen 3 1200V SiC Schottky diodes spanning 5–40A

Tags: Vishay

Visit: www.vishay.com

RSS

PIC Summit Europe

Book This Space