News: Microelectronics
29 January 2025
Infineon’s new CoolSiC Automotive MOSFET 1200V selected by FORVIA HELLA
Infineon Technologies AG of Munich, Germany says that its new CoolSiC Automotive MOSFET 1200V has been selected by Germany-based international automotive supplier FORVIA HELLA for its next-generation 800V DC–DC charging solution.
Designed for on-board charger and DC–DC applications in 800V automotive architectures, Infineon’s CoolSiC MOSFET comes in a Q-DPAK package and is available now. The device uses top-side cooling (TSC) technology, which enables what is claimed to be excellent thermal performance, easier assembly and lower system costs.
Picture: Infineon's new CoolSiC Automotive MOSFET 1200V.
“We are excited to continue our partnership with FORVIA HELLA, leveraging our high-efficiency SiC products based on TSC packages,” says Robert Hermann, VP of automotive high-voltage chips and discretes at Infineon.
“Together with Infineon, we will continue to offer sustainable and innovative products and comprehensive services that exceed our customers’ expectations and drive the development of advanced mobility,” says Guido Schütte, a member of the Electronics Executive Board at FORVIA HELLA.
Infineon’s new CoolSiC Automotive MOSFET 1200V in the Q-DPAK package is based on Gen1p technology and offers a drive voltage in the range of VGS(off)= 0V and V GS(off)= 20V. The 0V turn-off enables unipolar gate control, which simplifies design by reducing the number of components in the PCB. With a creepage distance of 4.8mm, the package achieves an operating voltage of over 900V without the need for additional insulation coating. Compared with backside cooling, the TSC technology ensures optimized PCB assembly, reducing parasitic effects and resulting in significantly lower leakage inductances. As a result, customers benefit from lower package parasitics and lower switching losses, says Infineon. Heat dissipation is further improved by diffusion soldering the chip with .XT technology.
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