News: Microelectronics
22 January 2025
SemiQ launches QSiC 1700V series of high-reliability, low-loss SiC MOSFETs
SemiQ Inc of Lake Forest, CA, USA — which designs, develops and manufactures silicon carbide (SiC) power semiconductors and 150mm SiC epitaxial wafers for high-voltage applications — has announced a family of 1700V SiC MOSFETs designed to meet the needs of medium-voltage high-power conversion applications, such as photovoltaic and wind inverters, energy storage, electric vehicle (EV) and road-side charging, uninterruptable power supplies, and induction heating/welding.
The high-speed QSiC 1700V switching planar D-MOSFETs enable more compact system designs at large scale, with higher power densities and lower system costs. They feature a reliable body diode, capable of operation at up to 175oC, with all components tested to beyond 1900V, and UIL avalanche tested to 600mJ.
The QSiC 1700V devices are available both in a bare die form (GP2T030A170X) and as a 4-pin TO-247-4L-packaged discrete (GP2T030A170H) with drain, source, driver source and gate pins. Both are also available in an AEC-Q101 automotive-qualified version (AS2T030A170X and AS2T030A170H).
The MOSFETs deliver low switching and conduction losses, low capacitance and feature a rugged gate oxide for long-term reliability, with 100% of components undergoing wafer-level burn in (WLBI) to screen out potentially weak oxide devices.
SemiQ has also announced a series of three modules as part of the family to simplify system design, including a standard-footprint 62mm half-bridge module housed in an S3 package with an AlN insulated baseplate, as well as two SOT-227 packaged power modules.
Specifications
The QSiC 1700V series’ bare die MOSFET comes with an aluminium (Al) top side and nickel/silver (Ni/Ag) bottom side. Both it and the TO-247-4L packaged device have a power dissipation of 564W, with a continuous drain current of 83A (at 25oC, 61A at 100oC) and a pulsed drain current of 250A (at 25oC). They also feature a gate threshold voltage of 2.7V (at 25oC, 2.1V at 125oC), an RDSON of 31mΩ (at 25oC, 57mΩ at 125oC), a low (10nA) gate–source leakage current and a fast reverse recovery time (tRR) of 17ns. The TO-247-4L package has a junction-to-case thermal resistance of 0.27oC per watt.
The two 4-pin power modules are housed in a 38.0mm x 24.8mm x11.7mm SOT-227 design and deliver an increased power dissipation of 652W with an increased continuous drain current of 123A (at 25oC – GCMX015A170S1E1) and 88A (at 25oC GCMX030A170S1-E1). In addition to low switching losses, both modules have a low junction-to-case thermal resistance of 0.19oC and 0.36oC per watt and feature an easy-mount design for direct mounting of the isolated package to a heatsink.
The half-bridge module is housed in a 61.4mm x106.4mm x 30.9mm 9-pin S3 package and delivers a power dissipation of 2113W with a continuous drain current of 397A and a pulsed drain current of 700A. In addition to low switching losses, the GCMX005A170S3B1-N module has a junction-to-case thermal resistance of 0.06oC per watt.
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