News: Suppliers
14 July 2025
Incize and Atomera collaborate on GaN-on-Si technology for next-gen RF and power devices
Semiconductor characterization and modeling company Incize of Louvain-la-Neuve, Belgium and semiconductor materials and IP licensing company Atomera Inc of Los Gatos, CA, USA have announced a strategic collaboration to enhance gallium nitride on silicon (GaN-on-Si) technologies.
Whereas traditional silicon is hitting its performance ceiling in certain applications, GaN-on-Si offers a scalable, cost-effective alternative by taking advantage of GaN’s performance with silicon’s manufacturability. Combining Atomera’s Mears Silicon Technology (MST) with Incize’s advanced characterization is expected to accelerate the path to volume production of next-generation RF and power devices.
The partnership brings together Atomera’s proprietary MST — a quantum-engineered, ultra-thin silicon film that improves transistor performance, energy efficiency and reliability — with Incize’s characterization platforms, covering substrate trap analysis, noise, linearity, thermal effects and RF performance from DC to mmWave.
Specifically, the collaboration will explore the integration of MST into GaN-on-Si device structures, using Incize’s proprietary measurement techniques to evaluate:
- improved interface quality between GaN layers and silicon substrates;
- reduced parasitic effects and substrate losses;
- lower trap-induced noise and leakage; and
- enhanced linearity and RF power handling.
The joint program will concentrate on optimizing GaN-on-Si device performance for high-frequency and high-power applications, with target markets in wireless infrastructure (5G/6G), satellite communications and advanced power electronics.
Atomera’s MST technology has already demonstrated promising advantages in silicon-based devices, comments Incize’s CEO Dr Mostafa Emam. “By leveraging our advanced RF technology enablement capabilities and applying them to Atomera’s innovation, we aim to unlock new frontiers of performance, efficiency and reliability in GaN-on-Si platforms,” he adds.
“Incize’s track record with GaN-on-Si and their superb measurement and modeling capabilities make them an ideal partner,” believes Atomera’s CEO Scott Bibaud. “Together, we are exploring how MST can be harnessed to propel compound semiconductor devices forward,” he adds.
“It is most gratifying to see MST being explored beyond conventional silicon,” says Atomera’s founder & chief technology officer Dr Robert Mears. “GaN-on-Si is a fascinating and rapidly evolving field, and Incize’s in-depth understanding of RF device physics and their world-class measurement capability provide an excellent opportunity to investigate how MST can contribute to advancing this important technology.”
