News: Microelectronics
10 July 2025
Nexperia adds 1200V 20A SiC Schottky diodes for power-intense infrastructure
Discrete device designer and manufacturer Nexperia of Nijmegen, the Netherlands (which operates wafer fabs in Hamburg, Germany, and Hazel Grove Manchester, UK) has added two 1200V 20A silicon carbide (SiC) Schottky diodes to its portfolio of power electronics components.
The PSC20120J and PSC20120L have been designed to address the demand for ultra-low power loss rectifiers, which enable high-efficiency energy conversion in industrial applications. As such, they are suitable for the power supply units (PSUs) in power-intensive artificial intelligence (AI) server infrastructure, telecoms equipment and solar inverter applications.
The new Schottky diodes feature temperature-independent capacitive switching and zero recovery behavior that delivers an what is claimed to be outstanding figure-of-merit (QC x VF). Furthermore, they exhibit switching performance that is almost entirely independent of variations in current and switching speed.
The merged PiN Schottky (MPS) structure of the devices provides additional benefits, such as outstanding robustness against surge currents, as evidenced by their high peak forward current (IFSM). This feature mitigates the requirement for additional protection circuitry, significantly reducing system complexity and enabling engineers to achieve higher efficiency using smaller form factors in rugged high-voltage applications.
The PSC20120J is encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) surface-mount device (SMD) power plastic package, while the PSC20120L is housed in a Real-2-Pin TO247 R2P (TO-247-2) through-hole power plastic package. These thermally stable packages are said to enhance device reliability in high-voltage applications at operating temperatures up to 175°C.
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