News: Microelectronics
18 March 2025
EPC launches EPC2367 100V GaN FET with 1.2mΩ on-resistance
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA — which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications — has introduced the EPC2367, a next-generation 100V eGaN FET that delivers high performance and efficiency as well as lower system costs for power conversion applications.
Designed for 48V intermediate-voltage bus architectures, the EPC2367 advances the performance of power systems by reducing power loss, increasing efficiency, and enabling more compact and cost-effective designs. The new device is said to set a benchmark in performance compared with both previous-generation GaN and traditional silicon MOSFET solutions.
Key advantages of the EPC2367 are cited as:
- Ultra-low on-resistance (RDS(on)): 1.2mΩ, a ~30% improvement over previous-generation best-in-class devices;
- Smaller footprint: 3.3mm x 3.3mm QFN package, reducing PCB space and enhancing thermal performance;
- Best-in-class switching figures of merit (FoM): the EPC2367 is claimed to outperform competitors in hard- and soft-switching applications, delivering superior efficiency and lower power losses;
- Enhanced thermal performance: Operates cooler under load, improving system reliability and enabling higher power densities;
- Outstanding temperature cycling reliability: 4x the thermal cycling capability compared to previous GaN generations, ensuring robust long-term operation.
Superior in-circuit performance
The EPC2367 has been rigorously tested in hard- and soft-switching applications. Performance results are said to demonstrate higher efficiency across the full power range, with significant power loss reductions. In a 1MHz, 1.25kW system, EPC2367 reduces power losses while achieving 1.25x the output power compared with previous GaN and Si MOSFET alternatives, it is reckoned.
“The EPC2367 advances GaN technology with ultra-low on-resistance and superior thermal cycling, enabling engineers to boost efficiency and power density in AI servers, robotics and automotive systems,” says CEO & co-founder Alex Lidow.
Development board
The EPC90164 development board is a half-bridge featuring the EPC2367 GaN FET. It is designed for 80V maximum operating voltage and 35A maximum output current. Its purpose is to simplify the evaluation process of power systems designers to speed product time to market. The 2” x 2” (50.8mm x 50.8mm) board is designed for optimal switching performance and contains all critical components for easy evaluation.
The EPC2367 is priced at $2.81 each in 3000-unit volumes. The EPC90164 development board is priced at $200 each.
