News: Microelectronics
18 March 2025
Nexperia adds 12 devices to e-mode GaN FET portfolio
Discrete device designer and manufacturer Nexperia of Nijmegen, the Netherlands (which operates wafer fabs in Hamburg, Germany, and Hazel Grove Manchester, UK) has added to its expanding e-mode GaN FET portfolio with 12 new devices intended to address the growing demand for higher efficiency and more compact systems. The new low- and high-voltage e-mode GaN FETs address multiple markets including consumer, industrial, server/computing and telecoms, with a particular focus on supporting high-voltage, low-to-mid-power and low-voltage, low-to high-power use-cases. Nexperia says that, since introducing e-mode GaN FETs in 2023, it remains the only supplier in the industry to offer both cascode or d-mode and e-mode devices, providing designers with convenience when faced with variable challenges during the design process.
The latest additions to Nexperia’s e-mode GaN FET portfolio include new low-voltage 40V bi-directional devices (RDSon<12mΩ) to support over-voltage protection (OVP), load switching, and low-voltage applications including battery management systems (BMS) in mobile devices, and laptop computers. Also featuring in this release are 100V and 150V devices (RDSon<7mΩ) suitable for synchronous rectification (SR) power supplies in consumer devices, DC-DC converters in datacoms and telecoms equipment, photovoltaic micro-inverters, Class-D audio amplifiers and motor control systems in e-bikes, forklifts and light electric vehicles (LEVs). The new higher voltage range features 700V devices (RDSon >140mΩ) to support LED drivers and power factor correction (PFC) applications, and 650V devices (RDSon>350mΩ) suitable for use in AC/DC converters.
Nexperia says that the superior switching performance of its e-mode GaN FET technology is due to their exceptionally low QG and QOSS values. The new devices offer what is claimed to be industry-leading figures of merit (FOM), making them suitable for high-efficiency power solutions.
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