News: Microelectronics
19 March 2025
Nexperia launches 1200V SiC MOSFETs in top-side-cooled X.PAK packages
Discrete device designer and manufacturer Nexperia of Nijmegen, the Netherlands (which operates wafer fabs in Hamburg, Germany, and Hazel Grove Manchester, UK) has introduced a range of highly efficient and robust industrial-grade 1200V silicon carbide (SiC) MOSFETs with what is claimed to be industry-leading temperature stability in innovative X.PAK surface-mount (SMD) top-side-cooled packaging technology. With its compact form factor of 14mm x 18.5mm, the package combines the assembly benefits of SMD with the cooling efficiency of through-hole technology, ensuring optimal heat dissipation.
This release addresses the growing demand from a broad range of high-power (industrial) applications for discrete SiC MOSFETs that harness the advantages of top-side cooling to deliver exceptional thermal performance. These switches are suitable for industrial applications such as battery energy storage systems (BESS), photovoltaic inverters, motor drives, and uninterruptible power supplies (UPS). Additionally, they are well suited for electric vehicle charging infrastructure, including charge piles.
The X.PAK package further enhances the thermal performance of Nexperia's SiC MOSFETs by reducing the negative impacts of heat dissipation via the PCB. Furthermore, the firm’s X.PAK package enables low inductance for surface-mount components and supports automated board assembly.
The new X.PAK-packaged devices deliver what is claimed to be class-leading figures-of-merit (FoM) known from Nexperia SiC MOSFETs, with RDS(on) being a particularly critical parameter due to its impact on conduction power losses. However, many manufacturers concentrate on the nominal value of this parameter and neglect the fact that it can increase by more than 100% as device operating temperatures rise, resulting in significant conduction losses. Nexperia says that its SiC MOSFETs, on the other hand, offer industry-leading temperature stability, with the nominal value of RDS(on) increasing by only 38% over an operating temperature range from 25°C to 175°C.
“The introduction of our SiC MOSFETs in X.PAK packaging marks a significant advancement in thermal management and power density for high-power applications,” reckons Katrin Feurle, senior director & head of SiC Discretes & Modules. “This new top-side-cooled product option builds on our successful launches of discrete SiC MOSFETs in TO-247 and SMD D2PAK-7 packages.”
The initial portfolio includes products with RDS(on) values of 30mΩ, 40mΩ, 60mΩ (NSF030120T2A0, NSF040120T2A1, NSF060120T2A0), a part with 17mΩ will be released in April. An automotive-qualified SiC MOSFETs portfolio in X.PAK packaging will follow later in 2025, as well as further RDS(on) classes like 80mΩ.
Nexperia’s 1200V SiC MOSFETs made available in D2PAK-7 SMD packages
Nexperia launches discrete 1200 V devices as its first silicon carbide MOSFETs
Mitsubishi Electric and Nexperia to co-develop SiC power semiconductors
