News: Microelectronics
5 March 2025
ROHM launches 650V GaN HEMT in compact, high-heat-dissipation TOLL package
Japan-based ROHM Co Ltd has developed the GNP2070TD-Z 650V GaN HEMTs in the TOLL (TO-LeadLess) package. Featuring a compact design with excellent heat dissipation, high current capacity and superior switching performance, the TOLL package is increasingly being adopted in applications that require high power handling, particularly inside industrial equipment and automotive systems. For this launch, package manufacturing has been contracted to outsourced semiconductor assembly & test (OSAT) provider ATX Semiconductor (Weihai) Co Ltd in Shandong Province, China.
ROHM began mass production of the first generation of its 650V GaN HEMTs in April 2023, followed by the release of power-stage ICs that combine a gate driver and 650V GaN HEMT in a single package. Now, ROHM has developed a product incorporating second-generation elements in a TOLL package, supplementing the existing DFN8080 package to strengthen ROHM’s 650V GaN HEMT package lineup, and meeting the demand for even smaller and more efficient high-power applications.
The new products integrate second-generation GaN-on-silicon chips in a TOLL package, achieving what are claimed to be industry-leading values in the device metric that correlates ON-resistance and output charge (RDS(on) x Qoss). This contributes to further miniaturization and energy efficiency in power systems that require high voltage resistance and high-speed switching.
Examples applications include:
- power supplies for servers, communication base stations, industrial equipment and more;
- AC adapters (USB chargers), PV inverters, energy storage system (ESS);
- a wide range of power supply systems with output power of 500W to 1kW-class can be installed.
To achieve mass production, ROHM leveraged proprietary technology and expertise in device design, cultivated through a vertically integrated production system, to carry out design and planning. Under the collaboration announced on 10 December, front-end processes are carried out by Taiwan Semiconductor Manufacturing Co Ltd (TSMC). Back-end processes are handled by ATX. In addition, ROHM plans to partner with ATX to produce automotive-grade GaN devices.
In response to increasing adoption of GaN devices in the automotive sector, which is expected to accelerate in 2026, ROHM plans to ensure the rapid introduction of automotive-grade GaN devices by strengthening these partnerships in addition to advancing its own development efforts.
“We are extremely pleased to have been entrusted with production by ROHM, a company renowned for its advanced manufacturing technologies and in-house production facilities that cover everything from wafer fabrication to packaging,” comments ATX’s director & general manager Liao Hongchang. “We began technical exchanges with ROHM in 2017 and are currently exploring possibilities for deeper collaboration. This partnership was made possible due to ATX’s track record and technical expertise in the back-end manufacturing of GaN devices,” he adds.
“ROHM not only offers standalone GaN devices but also provides power solutions that combine them with ICs, leveraging ROHM’s expertise in analog technology,” notes Satoshi Fujitani, general manager of ROHM’s AP Production Headquarters. “The knowledge and philosophy cultivated in the design of these products are also applied to device development,” he adds. “Collaborating with OSATs such as ATX, that possess advanced technical capabilities, allows us to stay ahead in the rapidly growing GaN market while utilizing ROHM’s strengths to bring innovative devices to market. Going forward, we will continue to enhance the performance of GaN devices to promote greater miniaturization and efficiency in a variety of applications.”
Picture: Product lineup.
Launched in December, the GNP2070TD-ZTR will be available via DigiKey, Mouser and Farnell from March, and will also be offered at other online distributors as they become available.
