News: Microelectronics
28 March 2025
Mazda and ROHM jointly developing automotive components using GaN
Japan’s Mazda Motor Corp and Kyoto-based ROHM Co Ltd have commenced joint development of automotive components using gallium nitride (GaN) power semiconductors.
Since 2022, Mazda and ROHM have been jointly developing inverters using silicon carbide (SiC) power semiconductors under a collaborative framework for the development and production of electric drive units. Now, they have also embarked on the development of automotive components using GaN power semiconductors, aiming to create innovative automotive components for next-generation electric vehicles.
The companies will collaborate to create a package that considers the entire vehicle, and solutions that innovate in weight reduction and design. They aim to unveil a demonstration model within fiscal year 2025, with practical implementation targeted for fiscal 2027.
“We are excited to work together to create a new value chain that directly connects semiconductor devices and cars,” says Ichiro Hirose, director, senior managing executive officer & CTO of Mazda.
Picture: Ichiro Hirose, director, senior managing executive officer & CTO of Mazda (left) and Katsumi Azuma, member of the board and senior managing executive officer of ROHM (right).
“ROHM's EcoGaN, capable of high-frequency operation, and the control IC that maximizes its performance are key to miniaturization and energy-saving,” says Katsumi Azuma, member of the board & senior managing executive officer of ROHM. To implement this, “collaboration with a wide range of companies is essential, and we have established various partnerships for the development and mass production of GaN,” he adds. By collaborating with Mazda, “we will understand the requirements for GaN from the perspective of application and final product development, contributing to the spread of GaN power semiconductors.”
ROHM showcasing EcoGaN and SiC power semiconductors at PCIM Europe
