AES Semigas

IQE

13 March 2025

Sumitomo Chemical exhibiting compound semiconductor products at APEC

In booth 2144 at the IEEE Applied Power Electronics Conference (APEC 2025) Exposition at the Georgia World Congress Center in Atlanta, GA, USA (17-19 March), Japan-based Sumitomo Chemical Co Ltd is exhibiting gallium nitride (GaN) substrates and high-purity GaN-on-GaN epitaxial wafers, which are expected to be used as semiconductor materials for next-generation power devices.

GaN power devices are expected to contribute to reducing the energy consumption of servers in data centers, where power consumption is increasing due to the rise of artificial intelligence (AI), as well as to improving battery power conversion efficiency and thereby extending the cruising range of electric vehicles (EVs).

Sumitomo Chemical is developing 6-inch GaN substrates to meet the wafer size requirements for power semiconductor processing by refining crystal growth and processing technologies for 2-inch GaN substrates, which have been mass-produced for use in laser applications. In this development project, the firm aims to improve crystal quality to contribute to making power devices smaller and more efficient.

See related items:

Sumitomo presents pore-assisted free-standing GaN

Tags: Free-standing GaN GaN substrates

Visit: www.apec-conf.org

Visit: www.sumitomo-chem.co.jp/sciocs/english

RSS

Book This Space