News: Microelectronics
20 March 2025
TI launches integrated GaN power stages in TOLL packages
To simplify data-center design, at the Applied Power Electronics Conference (APEC 2025) in Atlanta, GA, USA (16–20 March) Dallas-based Texas Instruments Inc (TI) has introduced a new family of integrated GaN power stages in industry-standard transistor outline leadless (TOLL) packaging, , allowing designers to take advantage of the efficiency of TI’s GaN without costly and time-consuming redesigns.
The new LMG3650R035, LMG3650R070 and LMG3650R025 power stages integrate a high-performance gate driver with a 650V GaN field-effect transistor (FET) while achieving high efficiency (>98%) and high-power density (>100W/in3). They also integrate advanced protection features including over-current protection, short-circuit protection and over-temperature protection. This is especially important for AC/DC applications like server power, where designers are challenged to push more power into smaller spaces.
At APEC, TI also showcased power solutions offering what are claimed to be new levels of power density and efficiency, including:
- Dell's 1.8kW server power-supply unit (PSU) with TI GaN power stages: Dell's first high-efficiency 12V PSU design uses a TI integrated GaN power stage. The PSU features a GaN FET with built-in driver, protection and temperature reporting to achieve over 96% system-level efficiency.
- Vertiv's 5.5kW server PSU: Part of Vertiv’s PowerDirect Rack DC power system, the latest PSU from Vertiv is powered by TI’s GaN technology to deliver up to 132kW per rack.
- Greatwall's 8kW PSU: To help designers increase power density, Greatwall and TI co-developed an 8kW open-rack PSU using TI’s GaN technology and TI C2000 real-time microcontrollers.
Preproduction quantities of the LMG3650R035, LMG3650R070 and LMG3650R025 are now available for purchase. Evaluation modules are also available for all devices.
TI adds 200mm GaN power semiconductor production in Japan, quadrupling internal capacity
TI unveils first 650V three-phase GaN intelligent power module for 250W motor drive applications
