News: Microelectronics
13 March 2025
Vishay showcasing SiC MOSFET technology at APEC 2025
At the IEEE Applied Power Electronics Conference & Exposition (APEC 2025) in Atlanta, GA, USA (16–20 March), Vishay Intertechnology Inc of Malvern, PA, USA is showcasing its portfolio of passive and semiconductor solutions that address the latest trends in power electronics — from energy harvesting, electric vehicle (EV) power-trains, and battery technologies to high-efficiency power conversion for data centers.
Taking center stage in booth 905 is Vishay’s new 1200V MaxSiC series silicon carbide (SiC) MOSFETs, which deliver on-resistances of 45mW, 80mW and 250mΩ in standard packages for industrial applications, with custom products also possible. In addition, Vishay is providing a portfolio roadmap for 650–1700V SiC MOSFETs with on-resistances ranging from 10mΩ to 560Ω. Vishay’s SiC platform is based on a proprietary MOSFET technology — enabled through its acquisition of MaxPower Semiconductor Inc — which will address market demands in traction inverter, photovoltaic energy storage, on-board charger, and charging station applications.
In booth 419, Vishay is highlighting high-energy PTC and NTC in-rush current-limiting solutions from the firm’s most recent acquisition Ametherm. They include a PTC matrix capable of withstanding 1500VDC and 1125J. Vishay Ametherm products are suited to growing industries and applications, such as robotic automation, industrial power supplies and motor drives, power distribution for server and AI cloud computing, LED lighting systems, medical devices, imaging equipment, electric vehicle charging, and alternative energy infrastructure.
At APEC, Vishay is also offering a variety of product-focused demonstrations highlighting IHLE series low profile, high-current inductors featuring integrated E-field shields; the THJP ThermaWick Thermal Jumper; the pulse performance of MELF, CRCW/CRCW-HP thick film, and MCS, MCU and MCW thin-film chip resistors; and the thermal capabilities of the PCAN and RCP high-power thin- and thick-film resistors. In addition, automotive-focused application demonstrations include:
- an intelligent battery shunt built on WSBE Power Metal Strip resistors, with low TCR and a CAN FD/USB interface for 400V/800V systems;
- a 48V eFuse featuring TrenchFET MOSFETs designed to handle a continuous current up to 100A and operate continuously at maximum current with less than 14W of losses;
- a 1kW, 48V/12V buck-boost converter featuring two module power stages — each rated for 500W — in a compact form factor.
Additional Vishay passive components on display at APEC include the IHDM series of high-current, edge-wound through-hole inductors with continuous operation to +180°C; hybrid planar and integrated transformers; wireless charging coils; sensing NTC and PTC thermistors, including the PTCEL series capable of handling energy absorption up to 240J; Power Metal Strip resistors with high power to 9W and shunts with low TCR down to <±10ppm/°C; high-power wire-wound, thin-film and thick-film resistors, including the anti-surge RCS with power to 0.5W in the 0805 case size; high-frequency thick-film resistors with up to 500,000 thermal cycles; high-voltage thick-film resistors and dividers; high-voltage aluminum, ceramic and power electronic capacitors (PEC); high-capacity energy storage capacitors; military-grade, high-energy and hermetically sealed tantalum capacitors; and robust metallized polypropylene film capacitors, including the MKP1848e DC-Link capacitor with high-temperature operation to +125°C.
Highlighted Vishay semiconductor solutions consist of the SiC967 microBRICK synchronous buck regulator with integrated power MOSFETs and inductor and a wide input voltage range of 4.5–60V; scalable microBUCK voltage regulators that deliver high-efficiency; 400V, 600V and 1200V standard rectifiers in SlimDPAK 2L and SMPD 2L packages with high creepage distance; 650V and 1200V SiC Schottky diodes up to 12A in eSMP series and power packages for AC/DC power factor correction (PFC) and ultra-high-frequency output rectification; transient voltage suppressors (TVS); and analog switches in all major configuration types.
Vishay launches 650V and 1200V silicon carbide Schottky diodes in SOT-227 package
Vishay introduces 16 new Gen 3 1200V SiC Schottky diodes spanning 5–40A
