News: Microelectronics
20 May 2025
Toshiba releases 650V third-generation SiC MOSFETs in DFN8x8 package
Toshiba Electronic Devices & Storage Corp of Kawasaki, Japan has started volume shipments of four new 650V silicon carbide (SiC) MOSFETs (TW031V65C, TW054V65C, TW092V65C and TW123V65C), equipped with its latest third-generation SiC MOSFET chips and housed in a compact 8mm x 8mm x 0.85mm DFN8x8 package.
The new products are the first third-generation SiC MOSFETs to use the small surface-mount DFN8x8 package, which reduces volume by more than 90% compared with lead-inserted packages such as TO-247 and TO-247-4L(X) and improves equipment power density.
Picture: Toshiba’s first 650V third-generation SiC MOSFETs in a DFN8x8 package.
Surface mounting also allows the use of parasitic impedance components smaller than those of lead-inserted packages, reducing switching losses. DFN8x8 is a 4-pin package (with a signal-source pin connected close to the FET chip), allowing the use of a Kelvin connection of its signal source terminal for the gate drive. This reduces the influence of inductance in the source wire within the package, achieving high-speed switching performance; in the case of TW054V65C, it reduces turn-on loss by about 55% and turn-off loss by about 25% compared with existing Toshiba products (a 650V third-generation SiC MOSFET with equivalent voltage and on-resistance that uses the TO-247 package without Kelvin connection), helping to reduce power loss in equipment.
The new devices are suitable for industrial equipment such as switched-mode power supplies (SMPS) in servers, data centers, communications equipment etc, uninterruptible power supplies (UPS), and power conditioners for photovoltaic inverters, and electric vehicle (EV) charging stations.
Toshiba says that it will continue to expand its lineup to contribute to improved equipment efficiency and increased power capacity.
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