News: Microelectronics
15 October 2025
Alpha and Omega Semiconductor supports 800VDC power architecture
Alpha and Omega Semiconductor Ltd (AOS) of Sunnyvale, CA, USA (which designs and develops discrete power devices, wide-bandgap power devices, power management ICs and modules) says that it is supporting the power requirements of the 800 VDC architecture announced by NVIDIA of Santa Clara, CA, which is set to power the next generation of AI data centers, featuring megawatt-scale racks to meet the exponential growth of AI workloads.
The shift from traditional 54V power distribution to an 800VDC system is a fundamental change in data-center design, aimed at overcoming the physical limits of existing infrastructure. By reducing power conversion steps and enabling more efficient power delivery, the 800VDC architecture promises significant efficiency gains, reduced copper usage, and improved reliability. This paradigm shift requires power semiconductors, particularly silicon carbide (SiC) and gallium nitride (GaN), to handle the higher voltages and frequencies with maximum efficiency.
Picture: 800VDC power architecture for next-gen AI factories.
“As a key supplier to the high-performance data-center market, our portfolio of SiC and GaN products is strategically aligned with the core technical demands of next generation AI factories with 800VDC power architecture,” says Ralph Monteiro, senior VP, Power IC and Discrete product lines at AOS. “We are collaborating with NVIDIA to design 800VDC power semiconductors to provide the high efficiency and power density necessary for the new power distribution modules, from the initial AC-to-DC conversion to the final DC-to-DC stages within the racks.”
AOS reckons that its expertise in developing and manufacturing wide-bandgap (WBG) semiconductors positions it as a strong enabler for this transition, since its products are suited to the crucial power conversion stages highlighted in the next-generation AI factory 800VDC power architecture:
- High-voltage conversion: AOS' SiC devices (including the Gen3 AOM020V120X3 or topside-cooled AOGT020V120X2Q) are said to offer superior voltage handling and low losses, making them suitable for either the power sidecar configuration or the single-step conversion of 13.8kV AC grid power directly to 800VDC at the data-center perimeter. This simplifies the power chain and enhances overall system efficiency.
- High-density DC-DC conversion: Within the racks, AOS’ 650V GaN FETs (like the upcoming AOGT035V65GA1) and 100V GaN FETs (like the AOFG018V10GA1) provide the required density essential for converting the 800VDC power to the lower voltages needed by GPUs. Their high-frequency switching capabilities allow for smaller, lighter converters, freeing up valuable space for more compute resources and improving cooling efficiency.
- Packaging innovations: AOS’ 80V, 100V stacked-die MOSFETs (like the AOPL68801) and 100V GaN FETs share a common package footprint, allowing designers to trade off cost and efficiency in the secondary side of LLC topologies and also in 54V-to-12V bus converters. AOS’ innovative stacked die packages enable next-level power density for the secondary-side LLC socket.
- Multi-phase controllers: AOS also offers high-performance, multi-rail 16-phase controllers for the 54V-to-12V and further downstream conversion stages to the AI SoC.
AOS says that, by providing these foundational power technologies, it is helping to advance the benefits of the 800VDC architecture, including up to a 5% improvement in end-to-end efficiency, a 45% reduction in copper requirements, and a significant cut in maintenance and cooling costs, reinforcing AOS’ commitment to enabling the creation of more sustainable and scalable AI infrastructure.
Alpha and Omega Semiconductor announces silicon carbide license deal and supply agreement
