News: Microelectronics
22 October 2025
CGD partners with GlobalFoundries to supply single-chip ICeGaN power devices
Fabless firm Cambridge GaN Devices Ltd (CGD) — which was spun out of the University of Cambridge in 2016 to design, develop and commercialize power transistors and ICs that use GaN-on-silicon substrates — is working GlobalFoundries of Malta, NY (GF, the only US-based pure-play foundry with a global manufacturing footprint, including facilities in the USA, Europe and Singapore). The partnership strengthens CGD’s fabless strategy, expanding the supply chain for its ICeGaN power devices.
CGD’s single-chip technology runs with standard silicon MOSFET drivers and is built using a standard silicon CMOS wafer fab process. So, there is no need for a specialist process in the wafer fab, and leveraging GF’s 8” process ensures that the manufacturing costs of CGD products remain inherently competitive.
ICeGaN IP is design- rather than process-based, so it is fab-agnostic and hence easily transferrable to new foundries. Furthermore, the CGD design flow has been built on years of experience in GaN technology and enables fast fab process porting through a proven methodology. Advanced machine learning algorithms are applied to proprietary test chip characterization data to refine the models, enabling the timely delivery of CGD’s newest products with reliable and predictable performance. This capability ensures ‘right first time’ designs that enable ICeGaN power devices to be brought to market in less time, claims CGD, providing it with the agility to innovate and respond quickly to the changing application landscape.
“Applying the CGD design flow to the excellent GF process design kit (PDK) is essential to enabling CGD to develop and manufacture our next-generation GaN power devices at a much faster time to market,” says chief operating officer Simon Stacey. “We are delighted to be partnering with GF, as their renowned foundry services and commitment to GaN are a perfect fit for our ICeGaN power devices.”
GaN offers unique advantages including higher efficiency, higher power density, compact in size with faster switching speeds. This enables power electronics designers to develop sustainable, energy-efficient systems. These inherent benefits, coupled with the flexibility of the proven fabless model, mean that CGD believes it is positioned to take advantage of rapidly growing markets, which can already be seen in the growing demand for GaN technology.
Uniquely, ICeGaN combines a GaN switch, interface and protection circuitry on the same GaN chip, in contrast to most other solutions that use multi-chip or co-packaged solutions. CGD says that its integrated approach means that devices are simple to drive using standard silicon technology and are very rugged. CGD claims to be the only company worldwide with single-chip technology that can run on a standard driver, making next-generation power systems more efficient and truly scalable. This will enable design engineers to have confidence in GaN, which offers significant efficiency, size and thermal benefits over traditional silicon devices.
