News: Microelectronics
17 August 2026
NoMIS demos 6.5kV large-die SiC MOSFET
NoMIS Power Corp of Albany, NY, USA — which was spun off from State University of New York Polytechnic Institute (SUNY Poly) in 2020, and develops silicon carbide (SiC) technologies for medium- and high-voltage power conversion — has demonstrated its first 6.5kV large-die SiC MOSFET. The device was measured at over 8kV blocking, 90mΩ on-resistance, and 55A drain current. The result extends NoMIS Power’s proven planar SiC device technology from its established 3.3kV devices into the high-voltage class, and establishes a clear, demonstrated path toward the company’s forthcoming 10kV MOSFETs and 20kV SiC IGBTs.
US-designed SiC roadmap
NoMIS Power’s high-voltage SiC roadmap spans three stages — 3.3kV in production and 6.5kV sampling, with 10kV in development:
- 3.3kV — available now. The complete 3.3kV SiC MOSFET family is in production, spanning 80mΩ (34A), 50mΩ (55A) and 25mΩ (105A) devices in TO-247-4L-HC and bare die, complemented by 50–160mΩ SiC bi-directional switches and a 500A half-bridge power module.
- 6.5kV — sampling now to US-based customers. The demonstrated large-die SiC MOSFET is sampling now for evaluation and anchors an expanding 6.5kV line, adding on-resistance variants, small-die devices, hybrid junction-barrier Schottky FET (JBSFET) devices, and standalone diodes. JBSFET construction prevents body diode degradation issues, making it very robust for critical applications. Target applications include high-voltage direct current (HVDC), solid-state transformers, pulsed power, rail traction, and MW-scale EV charging. Standard production 6.5kV parts are scheduled for fourth-quarter 2026 and will be available to commercial customers.
- 10kV and above — in development, sampling in Q4/2026. The pipeline includes MOSFETs, diodes, hybrid (JBSFET) devices, and SiC insulated-gate bipolar transistors (IGBTs) targeting grid-scale HVDC, next-generation traction, and advanced pulsed power, extending the roadmap toward 20kV.
“Demonstrating 6.5kV blocking to over 8kV proves our planar SiC platform scales cleanly from the 3.3kV devices shipping today into the high-voltage class,” says co-founder & CEO Dr Adam Morgan. “High-voltage SiC is becoming foundational to data-center, grid, aerospace and defense power systems, and it should be built at home — we’re building the domestic source the industry can qualify against, from 3.3kV and 6.5kV today to 10kV MOSFETs and 20kV SiC IGBTs on our roadmap.”
US-based, domestic source of high-voltage SiC
For programs dependent on a single supplier of high-voltage SiC, NoMIS Power offers a domestic alternative. The firm’s devices are US-designed, ITAR- and DFARS-aware, and available through various foundry options, and its SiC is already specified into US government-funded programs such as US Department of Energy and Department of War programs. The company supports device qualification and design-in — including form-fit-function-compatible devices and support for existing high-voltage SiC platforms — to reduce single-source risk and strengthen continuity of supply for mission-critical programs. NoMIS Power designs SiC devices, packaging and power modules at its facility within the Albany Nanotech Complex in Albany, New York.
Availability and engagement
The 6.5kV large-die SiC MOSFET is sampling now to US-based customers for evaluation, with standard production parts scheduled for Q4/2026. NoMIS Power is engaging system developers on design-in, custom current ratings, and packaging. Teams evaluating high-voltage SiC for HVDC, solid-state transformers, pulsed power, traction, high-power charging, or aerospace & defense platforms can contact NoMIS Power to align to the 6.5kV, 10kV and 20kV roadmap.
