News: Optoelectronics
13 August 2026
Sivers announces $3.4m program with SemiNex for InP light sources forAI data centers
Sivers Semiconductors AB of Kista, Sweden (which supplies RF beam-former ICs and lasers for AI data-center, SATCOM, defense and telecom applications) and SemiNex Corp of Danvers, MA, USA – which designs and makes indium phosphide (InP) lasers diodes, DFB lasers, semiconductor optical amplifiers (SOAs) and external-cavity lasers – have announced a program for next-generation InP light sources for AI data-center interconnects.
Initially valued at about $3.4m, the program targets high-power external laser sources for co-packaged optics (CPO), high-channel-count distributed feedback DFB arrays for wavelength-multiplexed links, and SOA gain stages that extend optical reach as channel counts scale. As optics move from the faceplate into the package, power per wavelength, wall-plug efficiency, and thermal stability increasingly determine how far an architecture can scale, making the light source a system-level design problem rather than a component selection.
“The advanced light sources needed for next-generation optical networking within AI factories are as crucial as the compute, memory and silicon photonics elements,” says Sivers Semiconductors’ CEO Vickram Vathulya. “We highly value our partnership with SemiNex to combine innovative technologies and deliver compelling light source solutions at scale to the market,” he adds.
“The optical layer is becoming the constraint on how far AI infrastructure can scale,” says SemiNex’s CEO Ronald Moore. “The industry needs more power, at more wavelengths, at higher efficiency, and there is no way to get there by pushing today's devices harder,” he adds. “Those gains come out of the design and processing of the InP itself, and that is exactly where our two teams are working together.”
Customer sampling and early production ramps are targeted for second-half 2027.
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