News: Suppliers
11 February 2026
HexaTech launches 3”-diameter aluminium nitride substrate
HexaTech Inc of Morrisville, NC, USA (a subsidiary of Stanley Electric Co Ltd of Tokyo, Japan) has announced the immediate production release of its new 3-inch (76.2mm)-diameter single-crystal aluminium nitride (AlN) substrate product.
Three-inch diameter substrates are seen as a key transition milestone toward the realization of 100mm-diameter material, supporting future high-volume production of AlN-based high-voltage and high-frequency electronic devices.
Picture: X-ray topography (XRT) image of 3-inch AlN substrate.
“With this 3-inch launch, HexaTech continues to build on its history of delivering AlN material with industry-leading structural and surface quality, retaining the same macroscopic defect-free performance we have been producing for many years with our existing 2-inch platform,” says R&D manager Dr Rafael Dalmau.
“HexaTech continues to drive increased value by delivering superior quality alongside reduced price per unit area to our customers,” says Gregory Mills, VP of business development. This accelerating trend will enable our customers to quickly transition from device research into production,” he adds.
“With our strategic focus on substrate diameter expansion, this launch is once again demonstrating HexaTech’s commitment to deliver our customers the market-leading AlN substrate solution,” says CEO John Goehrke.
HexaTech’s 2-inch and 3-inch diameter products are available now with standard lead times.
DARPA awards HexaTech AlN substrate development contract
HexaTech investment accelerates 100mm AlN substrate program
