News: Microelectronics
27 February 2026
ROHM licenses TSMC’s GaN processs technology for Hamamatsu fab
Japan-based ROHM Semiconductor has decided to integrate its own development and manufacturing technologies for GaN power devices with the process technology of foundry Taiwan Semiconductor Manufacturing Company Ltd (TSMC), with which ROHM has an ongoing partnership, to establish an end-to-end production system within the ROHM Group. Licensing TSMC GaN technology will strengthen its supply capability to meet growing demand for GaN in applications such as AI servers and electric vehicles, ROHM reckons.
Since they offer excellent high-voltage and high-frequency performance (helping to improve efficiency and reduce size in a wide range of applications), GaN power devices are already used in consumer products such as AC adapters. But adoption is also expanding in high-voltage applications such as power units for AI servers and on-board chargers for electric vehicles (EVs), and demand is expected to continue growing.
ROHM began developing GaN power devices at an early stage and established a mass-production system for 150V GaN at ROHM Hamamatsu in March 2022. In the mid-power range, ROHM has built its supply structure while advancing external collaborations. TSMC has been a key partners in this effort: ROHM adopted a 650V GaN process in 2023, and in December 2024 the two companies partnered on automotive GaN, further deepening their collaboration.
This latest integration represents an evolution of that partnership, says ROHM. Under a newly concluded license agreement, TSMC’s process technology will be transferred to ROHM Hamamatsu. ROHM aims to establish production in 2027 to meet expanding demand in applications such as AI servers.
Upon completion of the technology transfer, ROHM and TSMC will conclude their automotive GaN partnership. At the same time, the two firms will continue to strengthen collaboration for higher-efficiency and more compact power supply systems.
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