News: Microelectronics
1 July 2026
Dynex introduces 450A, 650V GaN half-bridge power module
Dynex Semiconductor Ltd of Lincoln, UK has developed a 450A, 650V gallium nitride (GaN) half-bridge power module, designed to deliver ultra-fast switching performance, high efficiency, and enhanced thermal management for demanding power conversion applications.
The new module combines advanced semiconductor technology with innovative packaging techniques to maximize performance. Key features include:
- 450A continuous current capability;
- 650V blocking voltage;
- half-bridge inverter configuration;
- planar PCB embedding technology;
- double-sided-cooling architecture;
- ultra-low commutation loop inductance below 1nH.
The module’s planar PCB embedding technology minimizes parasitic inductance within the power loop, enabling what is claimed to be exceptionally fast and stable switching performance.
The flexibility of the embedding process also allows close matching and balancing of parallel GaN devices, helping to achieve consistent switching behaviour across the module.
Optimized thermal management
To support high-power operation, the module incorporates a double-sided-cooled planar package structure. This minimizes thermal resistance between the semiconductor junction and the cooling system, allowing higher power densities while maintaining reliable operating temperatures.
The combination of low electrical parasitics and advanced thermal performance enables the module to operate efficiently in demanding environments where both power density and reliability are critical, says Dynex.
The new module is suitable for a wide range of high-performance power conversion applications, including:
- electric vehicle power systems;
- renewable energy inverters;
- energy storage systems;
- data-center power supplies;
- fast charging infrastructure;
- industrial power conversion;
- high-frequency power electronics.
