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3 July 2026

Munich Court bars Innoscience from importing products into Germany that infringe Infineon’s patent

Infineon Technologies AG of Munich, Germany says that the District Court Munich (Landgericht München I) has ruled in favor of it in another patent infringement case concerning gallium nitride (GaN) technology between it and China-based Innoscience (Suzhou) Technology Holding Co Ltd (which manufactures GaN-on-silicon power chips on 8” silicon wafers).

The case concerns what is claimed to be the unauthorized use of Infineon’s patented GaN technologies by Innoscience. With the latest rulings, the court prohibits Innoscience from importing, selling and marketing patent-infringing products in Germany. Furthermore, the court has ordered Innoscience to pay damages to Infineon.

Infineon says that the judgement marks another legal defeat for Innoscience in a series of court cases, each of which found that Innoscience’s products infringe Infineon’s patents. Courts and authorities in both Germany and the USA have repeatedly concluded that Innoscience’s products infringe Infineon’s intellectual property rights. Prior rulings include the decisions against Innoscience recently on 18 June, and previously on 1 August 2025, in earlier German proceedings. Furthermore, on 7 May, the Full Commission of the US International Trade Commission (ITC) found that Innoscience had infringed an Infineon patent in the field of GaN technology. Additional proceedings regarding the infringement of other Infineon patents are pending in the USA.

See related items:

Innoscience secures removal of court-enjoined Infineon GaN products from electronica China

Munich District Court rules in favour of Infineon in patent infringement cases against Innoscience

ITC affirms initial determination that Innoscience infringed Infineon GaN patent

Tags: GaN-on-Si

Visit: www.innoscience.com

Visit: www.infineon.com

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