News: Microelectronics
8 June 2026
CGD’s new 650V ICeGaN device for automotive applications helps increase EV range
Fabless firm Cambridge GaN Devices Ltd (CGD) — which was spun out of the University of Cambridge in 2016 to design, develop and commercialize power transistors and ICs that use GaN-on-silicon substrates — has developed a 650V GaN IC for automotive applications that addresses automakers’ desire to improve inverter efficiency. ICeGaN helps designers to realise smaller, lighter inverters that help to extend EV range, which is crucial in continuing to drive consumer momentum away from internal combustion engine ICE powertrains and towards EVs.
Using GaN ICs in parallel for powertrain designs can be a significant challenge for developers to keep the devices balanced. The ICeGaN interface inherently balances the operation of multiple devices without the need to select devices with similar performance characteristics or the need to incorporate balancing components and additional design complexity.
With a low on-resistance of only 9mΩ, the new ICeGaN device provides significantly lower losses throughout an electric vehicle’s powertrain, lessening the need for thermal management strategies and components. A further benefit is higher-frequency switching ability that can enable downsizing and weight reduction of the propulsion system, boosting the range of the vehicle.
The ICeGaN simplifies the interface with the gate driver ICs in the inverter and allows simple parallel operation with the larger die. The auxiliary transistor in the interface filters out parasitic noise from the gate driver loops, giving the device a built-in immunity to noise.
The interface also includes integrated temperature sensing for system control and improved diagnostics that improve the reliability of the EV powertrain.
“This technology demonstrates the advantages of GaN and the ICeGaN interface for inverter designs with the lower losses, smaller size and lower costs that automotive developers are asking for,” says Dan Murphy, CGD’s senior director, product management.
CGD has already demonstrated a multi-level GaN 800Vdc inverter that can power electric motors to over 100kW peak, 75kW continuous power, benefiting a broad range of high-voltage electrification and motor-drive applications.
In October, CGD announced that it is working with GlobalFoundries of Malta, NY (GF, the only US-based pure-play foundry with a global manufacturing footprint, including facilities in the USA, Europe and Singapore) to make these and other devices. CGD says that this further strengthens its fabless strategy and expands its supply chain capabilities for ICeGaN and other power devices.
A 9mΩ prototype IC is sampling now to interested parties, and CGD is working with several automotive OEMS and tier-one suppliers on ICeGaN devices for EV powertrain designs.
CGD partners with GlobalFoundries to supply single-chip ICeGaN power devices
