News: Microelectronics
30 June 2026
Infineon introduces 120V common-footprint gate driver for silicon and GaN power designs on the same PCB
Infineon Technologies AG of Munich, Germany has introduced the EiceDRIVER 2EDL90xG3, a 120V common footprint gate driver designed to enable silicon (Si) and gallium nitride (GaN) power designs on the same PCB.
As AI data centers scale to higher power densities, the ability to evaluate and transition between silicon and GaN solutions without PCB redesign is becoming increasingly important for power system engineers. The 2EDL90xG3 addresses this need directly, supporting 48V and high-voltage intermediate bus converter (HV IBC) applications while eliminating design overhead during technology evaluation. A unique 5V gate clamp feature further simplifies GaN gate driver power supply design and contributes to improved system efficiency.
The 2EDL90xG3 offers five configurable operating modes, enabling support for a wide range of power topologies. Its dual floating output architecture, combined with the 5V gate clamp, enables hybrid switched capacitor (HSC) topology for both silicon and GaN designs. High driver strength of 4A source and 6A sink provides the flexibility required to drive the secondary side of HV-IBC stages. An integrated current-sensing amplifier with high bandwidth of typically 5MHz and high common mode voltage capability of up to 35V reduces system bill of materials (BoM) and improves power density. The current-sense amplifier delivers high accuracy of typically 1% at full scale, supporting precise control-loop regulation as well as fast over-current and short-circuit protection. An integrated bootstrap diode further reduces board space and system BoM in half-bridge and full-bridge applications. The 2EDL90xG3 is offered in a compact 16-pin 3mm x 3mm QFN package.
The driver design is optimized for use with Infineon’s broad AI server power delivery portfolio, spanning the full power chain from grid to core. This includes solid-state transformers and circuit breakers, power supply and battery backup units, intermediate bus converters, and second-stage DC conversion power modules. By combining the complementary strengths of silicon (Si), silicon carbide (SiC) and gallium nitride (GaN), Infineon says that it offers customers a clear, proven path to end-to-end power architectures. The portfolio is supported by consistent design resources and scalable, high-quality components tailored to next-generation AI server platforms.
Samples of the 2EDL900G3 and 2EDL901G3 are available now.
Infineon introduces CoolGaN-based high-voltage intermediate bus converter reference designs
