News: Microelectronics
9 June 2026
Nexperia and Semikron Danfoss to explore strategic collaboration on SiC power modules for automotive applications
Discrete device designer and manufacturer Nexperia B.V. of Nijmegen, the Netherlands (which operates wafer fabs in Hamburg, Germany, and Hazel Grove Manchester, UK) and power electronics firm Semikron Danfoss GmbH of Nuremberg, Germany have signed a memorandum of understanding (MoU) to explore a strategic collaboration on silicon carbide (SiC)-based power modules for automotive traction inverter applications. The collaboration aims to combine Nexperia’s expertise in SiC semiconductor technology with Semikron Danfoss’ capabilities in power module packaging and integration. Together, the firms intend to evaluate how a joint approach can enable high-performance, scalable solutions for next-generation electric vehicles.
SiC technology plays a critical role in improving the efficiency, power density and performance of electric drivetrains. By bringing together complementary competencies across the value chain – from chip to module – the companies aim to advance optimized solutions tailored to the demanding requirements of automotive applications. As part of the collaboration, both firms will explore joint engineering approaches, including early integration and co-design, to unlock the full performance potential of SiC-based systems.
Picture: Nexperia’s interim CEO Stefan Tilger and Carsten Götte, senior VP of Semikron Danfoss’ Automotive Power Modules Division, sign an MoU to explore collaboration on SiC power modules for automotive applications.
“By combining advanced semiconductor technology from Nexperia with our module expertise, we see strong potential to achieve more together than either could alone,” says Carsten Götte, senior VP of Semikron Danfoss’ Automotive Power Modules Division. “We look forward to exploring how this collaboration can create additional value for our customers in the rapidly evolving electric vehicle market,” he adds.
“Strong partnerships are essential to unlocking the full potential of wide-bandgap technologies, including SiC and GaN,” says Edoardo Merli, senior VP & head of Nexperia Wide Bandgap, IGBT & Modules (WIM) business group. “With our continued R&D investments and strong focus on early-stage collaboration, we actively drive the alignment of semiconductor and system requirements from the outset,” he adds. “This partnership with Semikron Danfoss, a global leader in power electronics, can advance our module offering.”
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