News: Microelectronics
10 June 2026
SemiQ expands high-thermal-performance QSiC Dual3 module range for SSTs and AC–DC converters in AI data-center power systems
SemiQ Inc of Lake Forest, CA, USA — which designs, develops and manufactures silicon carbide (SiC) power semiconductors and 150mm SiC epitaxial wafers for high-voltage applications — has expanded its QSiC Dual3 family of half-bridge MOSFET modules, adding high-thermal-performance options with AlN (aluminium nitride) substrates and pre-applied TIM (thermal interface material), as well as new 1700V devices.
The expanded family addresses demanding applications such as AC–DC converters and solid-state transformers (SSTs) in AI data-center power systems, in addition to grid converters in energy storage systems, and industrial motor drives in chillers and cooling towers.
The family enables the creation of power converters with what is claimed to be industry-leading conversion efficiency and power density. Additionally, the series includes an optional parallel Schottky barrier diode (SBD) to further reduce switching losses and improve efficiency in high-temperature environments. Several of the family’s devices exhibit RDSon as low as just 1mΩ, alongside power levels of 1150A, 1200V from a 62mm x 152mm package.
The QSiC Dual3 has been developed to enable the replacement of IGBT modules with minimal redesign, with all MOSFET die being screened using wafer-level gate-oxide burn-in tests exceeding 1450V. The modules additionally feature a low junction-to-case thermal resistance and enable a simplified system design with smaller, lighter heatsinks.
“Given that data centers require continuous, round-the-clock operation, maximizing efficiency is critical,” says president Dr Timothy Han. “The flexible design and industry-leading power density of our QSiC Dual3 series supports both active front-ends and compressor drives on liquid chiller applications, reducing size and weight compared to traditional silicon IGBT solutions while delivering the full efficiency of SiC,” he adds.
“And with the new high-thermal-performance options, the modules are also now being designed into the main AC-DC power converters and SSTs. This enables direct conversion from medium-voltage 13.8kV or 35kV AC to high-voltage 800V DC, delivering the ultra-efficient operation that modern data-center power systems demand.”
The expanded range of high-thermal-performance options features AlN substrates and pre-applied TIM (thermal interface material), carrying the suffix ‘-NT’ on the standard part numbers. 1700V 1.7mΩ devices have also been added – GCMX1P7C170S4B1(-NT) and GCMS1P7C170S4B1(-NT) – and will be available in the coming months.
The new lineup is on display at Alfatec’s stand (Hall 4A, booth #110) at the PCIM 2026 (Power Electronics, Intelligent Motion, Renewable Energy and Energy Management) Expo & Conference in Nuremberg, Germany (9–11 June).
SemiQ launches QSiC Dual3 family of 1200V half-bridge MOSFET modules
SemiQ debuting SiC power solutions for AI data centers and high-power infrastructure at APEC
