News: Microelectronics
23 March 2026
SemiQ launches QSiC Dual3 family of 1200V half-bridge MOSFET modules
SemiQ Inc of Lake Forest, CA, USA — which designs, develops and manufactures silicon carbide (SiC) power semiconductors and 150mm SiC epitaxial wafers for high-voltage applications — has launched the QSiC Dual3, a family of 1200V half-bridge MOSFET modules for motor drives in data-center cooling systems, grid converters in energy storage systems, and industrial drivers.
The family enables the creation of power converters with both industry-leading conversion efficiency and power density, it is claimed. Additionally, the series includes an optional parallel Schottky barrier diode to further reduce switching losses in high-temperature environments.
Two of the family’s six devices have an RDSon of just 1mΩ and a power density of 240W/in3 from its 62mm x 152mm package.
The QSiC Dual3 has been developed to enable the replacement of IGBT modules with minimal redesign, with all MOSFET die having been screened using wafer-level gate-oxide burn-in tests exceeding 1450V. The modules additionally feature a low junction-to-case thermal resistance and enable a simplified system design with smaller, lighter heat-sinks.
“Rising AI-driven power and thermal demands in data centers are pushing the limits of traditional cooling and power systems,” says president Dr Timothy Han. “With a flexible design and industry-leading power density, the QSiC Dual3 series supports 250kW liquid chiller applications on both active front ends and compressor drives, reducing size and weight compared to traditional silicon IGBT solutions while delivering the full efficiency of SiC.”
The new lineup is on display in booth #1451 at the Applied Power Electronics Conference (APEC 2026) at the Henry B Gonzalez Convention Center, San Antonio, TX, USA (22–26 March).
SemiQ debuting SiC power solutions for AI data centers and high-power infrastructure at APEC
SemiQ launches Gen3 1200V S3 modules for high-power industrial and EV applications
